四方相Fe:KTa_(1–x)Nb_(x)O_(3)晶体电致应变分布特性  

Electric-Field-Induced Strain Distribution Characteristics of Fe Doped KTa_(1-x)Nb_(x)O_(3) Crystal

作　　者：金昕宇 田浩[1,2,3] 谭鹏 王晓鸥[1] JIN Xinyu;TIAN Hao;TAN Peng;WANG Xiaoou(School of Physics,Harbin Institute of Technology,Harbin 150001,China;Key Laboratory of Micro-Nano Optoelectronic Information System,Ministry of Industry and Information Technology,Harbin 150001,China;Collaborative Innovation Center of Extreme Optics,Shanxi University,Taiyuan 030006,China)

机构地区：[1]哈尔滨工业大学物理学院,哈尔滨150001 [2]微纳光电信息系统理论与技术工信部重点实验室,哈尔滨150001 [3]山西大学极端光学协同创新中心,太原030006

出　　处：《硅酸盐学报》2022年第3期798-804,共7页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金项目(12074092,12004085);黑龙江省博士后经费(LBH–Z20065)资助。

摘　　要：采用顶部籽晶助熔法制备0.15%(摩尔分数)Fe掺杂的KTa_(1–x)Nb_(x)O_(3)晶体,测试了晶体介电性能、电致应变性能分布、组分分布和电畴结构。结果表明:数字全息是一种有效表征材料应变空间分布的方法,Fe:KTN晶体电致应变性能呈现不均匀分布的特性,室温下外加电场为435 V/mm时,晶体应变最大值为0.05%,有3/4区域应变在0.02%附近。Fe:KTN晶体的应变分布与组分分布、电畴结构之间存在联系,室温低于晶体Curie温度时,晶体Nb元素含量少的区域电畴结构小,具有更大的电致应变。KTa_(1–x)Nb_(x)O_(3)crystal doped with 0.15%(in mole fraction) Fe was prepared by a top-seeded solution growth method.The dielectric properties,electric-field-induced strain distribution,component distribution and domain structure of Fe:KTN crystal were characterized.The results show that digital holography is a promising method to measure the spatial distribution of strain,and the electric-field-induced strain properties of KTN crystal present a uneven distribution.At room temperature,the maximum strain of crystal is 0.05%when the applied electric field is 435 V/mm,while the strain value is near 0.02%3/4 area of crystal.There is a relationship among strain distribution,component distribution and domain structure of Fe:KTN crystal.The domain structure of crystal in the region with less Nb content is smaller and the electric-field-induced strain is greater when the room temperature is lower than the Curie temperature.

关 键 词：铁掺杂钽铌酸钾晶体 介电性能 电致应变 组分分布 电畴结构 

分 类 号：O482[理学—固体物理]