层状硫掺杂黑磷晶体的高频电磁性能  

High-Frequency Electromagnetic Properties of Layered Sulfur Doped Black Phosphorus Crystals

作　　者：王博翀 郝春雪[1] 常玉凯 牟从普 温福昇[1] 柳忠元[1] WANG Bochong;HAO Chunxue;CHANG Yukai;MOU Congpu;WEN Fusheng;LIU Zhongyuan(Center for High Pressure Science,State Key Laboratory of Metastable Materials Science&Technology,Yanshan University,Qinhuangdao 066004,China;Hebei Key Laboratory of Microstructure Materials Physics,School of Science,Yanshan University,Qinhuangdao 066004,China)

机构地区：[1]高压科学研究中心,亚稳材料制备技术与科学国家重点实验室,燕山大学,河北秦皇岛066004 [2]河北省微结构材料物理重点实验室,燕山大学理学院,河北秦皇岛066004

出　　处：《硅酸盐学报》2022年第2期285-289,共5页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金项目(51732010,52071280,51801175);河北省自然科学基金项目(E2020203151,E2019203233);河北省高等学校科学技术研究项目重点项目(ZD2020121)。

摘　　要：电子设备的增多使得吸波材料在军事和民用领域具有广泛的应用。当前研究的重点在于制备吸收强、频带宽、质量轻、厚度薄的新型吸波材料。利用高温高压成功合成黑磷(BP)和硫掺杂黑磷(BP-S)晶体,并使用液相剥离的方法制备BP和BP-S纳米片。高频电磁参数测量发现相较于BP,硫元素的掺杂使得BP-S复数介电常数和介电损耗正切值在频率1.0~16.5 GHz情况下明显提高。BP-S在9.6 GHz处最小反射损耗可达到–41.1 dB;当厚度在1.0~2.0 mm范围内变化时,小于–10 dB的反射损耗频率范围为7.0~16.1 GHz。BP-S的最小反射损耗频率点与材料厚度符合λ/4阻抗匹配模型。综上,层状硫掺杂黑磷作为高性能介电损耗吸波材料具有广阔的应用前景。Microwave absorbing materials are widely used in military and civil fields.The current research focusses on novel microwave absorbing materials with intense absorption,wide bandwidth,light weight and thin thickness.Black phosphorus(BP)and sulfur-doped black phosphorus(BP-S)crystals were prepared at a high temperature and a high pressure,and then BP and BP-S nanosheets were obtained via liquid-phase exfoliation.Compared with BP,the complex permittivity andεr″/εr′of BP-S are enhanced at 1.0–16.5 GHz.The minimum reflection loss(RL)reaches–41.4 dB at 9.6 GHz,and the RL exceeding–10 dB in a frequency range of 7.0 to 16.1 GHz is obtained for the absorber thickness of 1.0–2.0 mm.The minimum RL frequency dependence of the absorber thickness for BP-S comply with aλ/4 matching model.BP-S has broad application prospects as a high-performance microwave absorbing material.

关 键 词：黑磷 吸波材料 高温 高压 硫掺杂 高频 电磁性能 

分 类 号：TQ174.75[化学工程—陶瓷工业]