一种低触发电压的两级防护SCR器件  

A Two-Stage-Protection SCR Device with Low Trigger Voltage

作　　者：张英韬 朱治华 范晓梅 毛盼 宋彬 许杞安 吴铁将 陈睿科 王耀 刘俊杰 ZHANG Yingtao;ZHU Zhihua;FAN Xiaomei;MAO Pan;SONG Bin;XU Qi’an;WU Tiejiang;CHEN Ruike;WANG Yao;LIOU Juin Jei(Integrated Circuit Reliability Design and ESD Protection Lab.,Zhengzhou University,Zhengzhou 450000,P.R.China;School of Automation and Information Engineering,Xi’an University of Technology,Xi’an 710000,P.R.China;Changxin Memory Technologies,Inc.,Hefei 230000,P.R.China)

机构地区：[1]郑州大学集成电路可靠性设计与静电防护实验室,郑州450000 [2]西安理工大学自动化与信息工程学院,西安710000 [3]长鑫存储技术有限公司,合肥230000

出　　处：《微电子学》2022年第1期104-108,共5页Microelectronics

基　　金：国家自然科学基金资助项目(61874098)。

摘　　要：提出了一种用于降低触发电压的两级防护SCR(TSPSCR)。在传统LVTSCR中植入P-ESD层,增设额外的二极管。因为P-ESD层的掺杂浓度较高,该器件能更早发生雪崩击穿而触发第一级泄流路径,从而开启第二级泄流路径。Sentaurus TCAD仿真结果表明,该器件的触发电压从传统器件的10.59 V降低至4.12 V,维持电压为1.25 V,1 V直流电压下漏电流仅为7.85 nA。优化后的TSPSCR适用于先进1 V工作电压的电路中。A two-stage protection SCR(TSPSCR) was proposed to reduce the trigger voltage. The P-ESD layer was implanted in the traditional LVTSCR, and an additional diode was added. Because of the higher doping concentration of P-ESD layer, the device could trigger the first-stage discharge path by avalanche breakdown earlier, thus opening the second-stage discharge path. The Sentaurus TCAD simulation results showed that compared with conventional SCRs, the device had a lower trigger voltage from 10.59 V to 4.12 V, a maintenance voltage of 1.25 V, and a leakage current of 7.85 nA at 1 V DC voltage. The optimized TSPSCR could be used in advanced circuits with 1 V operating voltage.

关 键 词：ESD SCR 两级防护 触发电压 漏电流 

分 类 号：TN342[电子电信—物理电子学]