CZTSSe/CdS界面载流子复合及其抑制研究进展  

Research Progress of Carrier Recombination and Suppression Mechanism at CZTSSe/CdS Interface

作　　者：崔宇博 赵超亮 张志[1] 张梦云 徐艳萍 范丽波 郑直[2] CUI Yubo;ZHAO Chaoliang;ZHANG Zhi;ZHANG Mengyun;XU Yanping;FAN Libo;ZHENG Zhi(School of Materials Science and Engineering,Henan Polytechnic University,Jiaozuo 454000,China;Key Laboratory of Micro-Nano Materials for Energy Storage and Conversion of Henan Province,Institute of Surface Micro and Nano Materials,College of Chemical and Materials Engineering,Xuchang University,Xuchang 461000,China)

机构地区：[1]河南理工大学材料科学与工程学院,河南焦作454000 [2]许昌学院化工与材料学院/表面微纳材料研究所,河南省微纳米能量储存与转换材料重点实验室,河南许昌461000

出　　处：《许昌学院学报》2022年第2期59-63,共5页Journal of Xuchang University

基　　金：国家自然科学基金项目(52072327);河南省中原千人(中原学者)计划(202101510004)。

摘　　要：铜锌锡硫硒/硫化镉(CZTSSe/CdS)界面处载流子的复合是限制铜锌锡硫硒太阳能电池光电转换效率进一步提升的重要原因之一.针对这一问题,首先介绍了CZTSSe/CdS界面的能带结构和元素互扩散对载流子传输的影响,然后对Zn(O,S)、ZnSnO、ZnMgO三种无Cd缓冲层材料以及Al_(2)O_(3)、二维Ti_(3)C_(2)T_(x)两种界面钝化层材料在CZTSSe/CdS界面优化方面的研究进展进行综述.最后,对该领域未来的发展进行展望.The recombination of carriers at the CZTSSe/CdS interface is one of the important reasons that limit the further improvement of the photoelectric conversion efficiency of Cu_(2)ZnSn(S_(x),Se_(1-x))_(4) solar cells.In response to this problem,the band structure at the CZTSSe/CdS interface and the effect of element interdiffusion on carrier transport are introduced.The research status of Zn(O,S),ZnSnO and ZnMgO three Cd-free buffer layer materials in optimizing CZTSSe/CdS interface is reviewed.The application prospects of Al_(2)O_(3) and the emerging two-dimensional material Ti_(3)C_(2)T_(x) in CZTSSe/CdS interface passivation are discussed and the future development direction of this field is prospected.

关 键 词：铜锌锡硫硒 CZTSSe/CdS 载流子复合 太阳能电池 

分 类 号：TM914.42[电气工程—电力电子与电力传动]