压接型IGBT子模组在关断过程中的电场瞬态特性分析与调控  

Transient Characteristics Analysis and Modification of Electric Field for Press-packed IGBT Submodule During Turn-off Process

作　　者：文腾 崔翔 李学宝 刘思佳 赵志斌 张西子 林仲康 唐新灵 WEN Teng;CUI Xiang;LI Xuebao;LIU Sijia;ZHAO Zhibin;ZHANG Xizi;LIN Zhongkang;TANG Xinling(State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources(North China Electric Power University),Changping District,Beijing 102206,China;State Key Laboratory of Advanced Power Transmission Technology(Global Energy Interconnection Research Institute Co.,Ltd.),Changping District,Beijing 102209,China)

机构地区：[1]新能源电力系统国家重点实验室(华北电力大学),北京市昌平区102206 [2]先进输电技术国家重点实验室(全球能源互联网研究院有限公司),北京市昌平区102209

出　　处：《中国电机工程学报》2022年第6期2298-2307,共10页Proceedings of the CSEE

基　　金：国家自然科学基金–国家电网公司联合基金重点项目(U1766219)。

摘　　要：封装绝缘问题是压接型IGBT器件研制过程中面临的关键挑战之一,解决绝缘问题的关键是准确分析器件内部复合绝缘结构在运行工况下的电场分布特性。现有研究多在静电场或恒定电场下分析其静态电场特性,忽略了其在实际工况下的电场瞬态特性。针对刚性压接型IGBT器件,考虑到直流断路器用压接型IGBT面临的单次关断的实际工况,在电准静态场条件下,该文采用瞬态边界电场约束方程,准确计算压接型IGBT子模组复合绝缘结构中的瞬态电场,获得器件内部不同介质交界面上的界面电荷密度,详细分析瞬态电场的时空分布特性。在此基础上,该文从子模组的绝缘结构和封装绝缘材料参数两方面对子模组的瞬态电场进行调控,结果表明,该文所提控制方法能显著降低绝缘薄弱环节处的电场强度。In the development of press-packed IGBT(PPI)devices,insulation problem of the package structure is one of the key challenges.The key to solving the insulation problem is to accurately analyze the electric field distribution of the composite insulation structure under the working condition.The existing research mostly aims at static characteristics of the electric field under the electrostatic field or the DC field.However,the transient characteristics under actual working conditions are ignored.Focusing on the rigid PPI submodule,the actual working conditions of single turn-off process for DC circuit breakers application were considered.The transient constrained electric field equation on the boundary was employed to calculate the transient electric field accurately under the EQS condition.Besides,the interfacial charge density on the dielectric interfaces inside the PPI submodule was extracted with high accuracy.Moreover,the temporal and spatial distribution of the transient electric field were analyzed in detail.On this basis,the transient electric field within the PPI submodule was modulated from the two aspects of the insulation structure and material parameters of packaging materials.The results show that the proposed control method can reduce the electric field intensity significantly at the weak area of the of the PPI submodule.

关 键 词：压接型IGBT 复合绝缘结构 瞬态电场 电准静态场 直流断路器工况 瞬态边界电场约束方程 

分 类 号：TM85[电气工程—高电压与绝缘技术]