Multilayer Strategy for Photoelectrochemical Hydrogen Generation:New Electrode Architecture that Alleviates Multiple Bottlenecks  

作　　者：Selvaraj Seenivasan Hee Moon Do‑Heyoung Kim 

机构地区：[1]School of Chemical Engineering,Chonnam National University,77 Yongbong‑ro,Gwangju 61186,Republic of Korea

出　　处：《Nano-Micro Letters》2022年第5期92-109,共18页纳微快报（英文版）

基　　金：We are grateful to Prof.Hong H.Lee for the valuable and in-depth conversations related to this study.This study was financially supported by the National Research Foundation of Korea(2021R1A2C1012735);Open access funding provided by Shanghai Jiao Tong University

摘　　要：Years of research have demonstrated that the use of multiple components is essential to the development of a commercial photoelectrode to address specific bottlenecks,such as low charge separation and injection efficiency,low carrier diffusion length and lifetime,and poor durability.A facile strategy for the synthesis of multilayered photoanodes from atomic-layer-deposited ultrathin films has enabled a new type of electrode architecture with a total multilayer thickness of 15–17 nm.We illustrate the advantages of this electrode architecture by using nanolayers to address different bottlenecks,thus producing a multilayer photoelectrode with improved interface kinetics and shorter electron transport path,as determined by interface analyses.The photocurrent density was twice that of the bare structure and reached a maximum of 33.3±2.1 mA cm^(−2) at 1.23 VRHE.An integrated overall water-splitting cell consisting of an electrocatalytic NiS cathode and Bi_(2)S_(3)/NiS/NiFeO/TiO_(2) photoanode was used for precious-metal-free seawater splitting at a cell voltage of 1.23 V without degradation.The results and root analyses suggest that the distinctive advantages of the electrode architecture,which are superior to those of bulk bottom-up core–shell and hierarchical architectures,originate from the high density of active sites and nanometer-scale layer thickness,which enhance the suitability for interface-oriented energy conversion processes.

关 键 词：Atomic layer deposition Bismuth sulfide n-p junction PHOTOELECTROCHEMICAL Nickel sulfide 

分 类 号：TQ116.2[化学工程—无机化工]