Photonic crystal nanobeam cavities based on 4H-silicon carbide on insulator  

作　　者：Liping Zhou Chengli Wang Ailun Yi Chen Shen Yifan Zhu Kai Huang Min Zhou jiaxiang Zhang Xin Ou 周李平;王成立;伊艾伦;沈晨;朱一帆;黄凯;周民;张加祥;欧欣(State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;X0I Technology Co.,Ltd.,Shanghai 201899,China)

机构地区：[1]State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China [2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [3]X0I Technology Co.,Ltd.,Shanghai 201899,China

出　　处：《Chinese Optics Letters》2022年第3期24-29,共6页中国光学快报（英文版）

基　　金：This work was supported by the National Key Research and Development Program of China(Nos.2017YFE0131300 and 2019YFB1803901);National Natural Science Foundation of China(Nos.U1732268,61874128,61851406,12074400,11705262,and 11905282);Frontier Science Key Program of Chinese Academy of Sciences(No.QYZDY-SSW-JSC032);Shanghai Key Basic Research Program(No.20JC1416200);Program of Shanghai Academic Research Leader(Nos.9XD1404600 and 19XD1404600);Shanghai Rising-Star Program(No.19QA1410600);Shanghai Sailing Program(No.18YF1428100);Shanghai Municipal Science and Technology Major Project(No.2017SHZDZX03);Strategic Priority Research Program of Chinese Academy of Sci-ences(Nos.XDB24020400 and XDB0000000);Science and Technology Comission of Shanghai Municipality(No.16ZR1442600).

摘　　要：The 4H-silicon carbide on insulator(4H-SiC0l)has recently emerged as an attractive material platform for integrated photonics due to its excellent quantum and nonlinear optical properties.Here,we experimentally realize one-dimensional photonic crystal nanobeam cavities on the ion-cutting 4H-SiC0l platform.The cavities exhibit quality factors up to 6.1×10^(3)and mode volumes down to 0.63×[λ/n]^(3)in the visible and near-infrared wavelength range.Moreover,by changing the excitation laser power,the fundamental transverse-electric mode can be dynamically tuned by 0.6 nm with a tuning rate of 33.5 pm/mW.The demonstrated devices offer the promise of an appealing microcavity system for interfacing the optically addressable spin defects in 4H-SiC.

关 键 词：photonic crystal cavities silicon carbide thermo-optic effect 

分 类 号：TN256[电子电信—物理电子学]