Impact of p-AlGaN/GaN hole injection layer on GaN-based vertical cavity surface emitting laser diodes[Invited]  

作　　者：Lei Han Yuanbin Gao Sheng Hang Chunshuang Chu Yonghui Zhang Quan Zheng Qing Li Zi-Hui Zhang 韩磊;高元斌;杭升;楚春双;张勇辉;郑权;李青;张紫辉(State Key Laboratory of Reliability and Intelligence of Electrical Equipment,Hebei University of Technology,Tianjin 300401,China;Key Laboratory of Electronic Materials and Devices of Tianjin,School of Electronics and Information Engineering,Hebei University of Technology,Tianjin 300401,China;Hebei Key Laboratory of Advanced Laser Technology and Equipment,Tianjin 300401,China;Key Engineering Center of Flat-Panel-Display Glass and Equipment,Shijiazhuang 050035,China)

机构地区：[1]State Key Laboratory of Reliability and Intelligence of Electrical Equipment,Hebei University of Technology,Tianjin 300401,China [2]Key Laboratory of Electronic Materials and Devices of Tianjin,School of Electronics and Information Engineering,Hebei University of Technology,Tianjin 300401,China [3]Hebei Key Laboratory of Advanced Laser Technology and Equipment,Tianjin 300401,China [4]Key Engineering Center of Flat-Panel-Display Glass and Equipment,Shijiazhuang 050035,China

出　　处：《Chinese Optics Letters》2022年第3期35-40,共6页中国光学快报（英文版）

基　　金：This work was supported in part by the National Natural Science Foundation of China(Nos.62074050 and 61975051);Natural Science Foundation of Hebei Province(No.F2020202030);State Key Laboratory of Reliability and Intelligence of Electrical Equipment,Hebei University of Technology(No.EERI_PI2020008);Joint Research Project for Tunghsu Group and Hebei University of Technology(No.HI1909);Guangdong Basic and Applied Basic Research Foundation(Nn 2019A1515111053)。

摘　　要：The hole injection capability is essentially important for GaN-based vertical cavity surface emitting lasers[VCSELs]to enhance the laser power.In this work,we propose GaN-based VCSELs with the p-AlGaN/p-GaN structure as the p-type hole supplier to facilitate the hole injection.The p-AlGaN/p-GaN heterojunction is able to store the electric field and thus can moderately adjust the drift velocity and the kinetic energy for holes,which can improve the thermionic emission proc-ess for holes to travel across the p-type electron blocking layer[p-EBL].Besides,the valence band barrier height in the p-EBL can be reduced as a result of usage of the p-AlGaN layer.Therefore,the better stimulated radiative recombination rate and the increased laser power are obtained,thus enhancing the 3 dB frequency bandwidth.Moreover,we also inves-tigate the impact of the p-AlGaN/p-GaN structure with various AIN compositions in the p-AlGaN layer on the hole injection capabilit,the laser power,and the了dB frequency bandwidth.

关 键 词：GaN-based VCSEL hole injection laser power modulation response 

分 类 号：TN248[电子电信—物理电子学]