Fabrication of the high-Q Si_(3)N_(4) microresonators for soliton microcombs  

作　　者：Shuai Wan Rui Niu jin-Lan Peng jin Li Guang-Can Guo Chang-Ling Zou Chun-Hua Dong 万帅;牛睿;彭金兰;李锦;郭光灿;邹长铃;董春华(CAS Key Laboratory of Quantum Information,University of Science and Technology of China,Hefei 230026,China;CAS Center For Excellence in Quantum Information and Quantum Physics,University of Science and Technology of China,Hefei 230026,China;Center for Micro and Nanoscale Research and Fabrication,University of Science and Technology of China,Chinese Academy of Sciences,Hefei 230026,China)

机构地区：[1]CAS Key Laboratory of Quantum Information,University of Science and Technology of China,Hefei 230026,China [2]CAS Center For Excellence in Quantum Information and Quantum Physics,University of Science and Technology of China,Hefei 230026,China [3]Center for Micro and Nanoscale Research and Fabrication,University of Science and Technology of China,Chinese Academy of Sciences,Hefei 230026,China

出　　处：《Chinese Optics Letters》2022年第3期111-116,共6页中国光学快报（英文版）

基　　金：This work was supported by the National Key Research and Development Program of China(No.2020YFB2205801);National Natural Science Foundation of China(Nos.11934012,11874342,and 92050109);the Fundamental Research Funds for the Central Universities.C.H.Dong was also supported by the State Key Laboratory of Advanced Optical Communication Systems and Networks,Shanghai Jiao Tong University,China.This work was partially carried out at the USTC Center for Micro and Nanoscale Research and Fabrication.The authors declare no conflicts of interest.

摘　　要：The microresonator-based soliton microcomb has shown a promising future in many applications.In this work,we report the fabrication of high quality[Q]Si_(3)N_(4)microring resonators for soliton microcomb generation.By developing the fabri-cation process with crack isolation trenches and annealing,we can deposit thick stoichiometric Si3N4 film of 800 nm without cracks in the central area.The highest intrinsic Q of the Si_(3)N_(4)microring obtained in our experiments is about 6×10^(6),corresponding to a propagation loss as low as 0.058 dBm/cm.With such a high Q film,we fabricate microrings with the anomalous dispersion and demonstrate the generation of soliton microcombs with 100 mW on-chip pump power,with an optical parametric oscillation threshold of only 13.4 mW.Our Si_(3)N_(4)integrated chip provides an ideal platform for researches and applications of nonlinear photonics and integrated photonics.

关 键 词：silicon nitride microresonator optical frequency comb dissipative Kerr soliton 

分 类 号：O43[机械工程—光学工程] TN751.2[理学—光学]