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作 者:Qiangwei Yin Zhijun Tu Chunsheng Gong Shangjie Tian Hechang Lei 殷蔷薇;涂志俊;龚春生;田尚杰;雷和畅(Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials&Micro-nano Devices,Renmin University of China,Beijing 100872,China)
出 处:《Chinese Physics Letters》2021年第12期62-68,共7页中国物理快报(英文版)
基 金:Supported by the National Key R&D Program of China(Grant No.2018YFE0202600);the Beijing Natural Science Foundation(Grant No.Z200005);the National Natural Science Foundation of China(Grant Nos.11822412 and 11774423);the Fundamental Research Funds for the Central Universities and Research Funds of Renmin University of China(RUC)(Grant Nos.19XNLG17 and20XNH062);the Outstanding Innovative Talents Cultivation Funded Programs 2020 of Renmin Univertity of China;the Beijing National Laboratory for Condensed Matter Physics;Collaborative Research Project of Laboratory for Materials and Structures,Institute of Innovative Research,Tokyo Institute of Technology。
摘 要:We report two new members of V-based kagome metals CSV_(6)Sb_(6)and CsV_(8)Sb_(12).The most striking structural feature of CSV_(6)Sb_(6)is the V kagome bilayers.For CsV_(8)Sb_(12),there is an intergrowth of two-dimensional V kagome layers and one-dimensional V chains,and the latter ones lead to the orthorhombic symmetry of this material.Further measurements indicate that these two materials exhibit metallic and Pauli paramagnetic behaviors.More importantly,different from CSV_(3) Sb_(5),the charge density wave state and superconductivity do not emerge in CSV_(6)Sb_(6)and CsV_(8)Sb_(12)when temperature is above 2 K.Small magnetoresistance with saturation behavior and linear field dependence of Hall resistivity at high field and low temperature suggest that the carriers in both materials should be uncompensated with much different concentrations.The discovery of these two new V-based kagome metals sheds light on the exploration of correlated topological materials based on kagome lattice.
关 键 词:RESISTIVITY striking
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