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作 者:Xiufeng Han Yu Zhang Yizhan Wang Li Huang Qinli Ma Houfang Liu Caihua Wan Jiafeng Feng Lin Yin Guoqiang Yu Tian Yu Yu Yan 韩秀峰;张雨;王翼展;黄黎;马勤礼;刘厚方;万蔡华;韦家峰;尹林;于国强;余天;闫羽(Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;University of Chinese Academy of Sciences,Beijing 100049,China;College of Physical Science and Technology,Sichuan University,Chengdu 610065,China;Key Laboratory of Physics and Technology for Advanced Batteries(Ministry of Education),Department of Physics,Jilin University,Changchun 130012,China)
机构地区:[1]Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [2]University of Chinese Academy of Sciences,Beijing 100049,China [3]College of Physical Science and Technology,Sichuan University,Chengdu 610065,China [4]Key Laboratory of Physics and Technology for Advanced Batteries(Ministry of Education),Department of Physics,Jilin University,Changchun 130012,China
出 处:《Chinese Physics Letters》2021年第12期80-84,共5页中国物理快报(英文版)
基 金:Supported by the Framework Project of SGCC(Grant No.5700-202058381A-0-0-00);the National Key Research and Development Program of China(Grant No.2017YFA0206200)。
摘 要:Detection of ultralow magnetic field requires magnetic sensors with high sensitivity and low noise level,especially for low operating frequency applications.We investigated the transport properties of tunnel magnetoresistance(TMR)sensors based on the double indirect exchange coupling effect.The TMR ratio of about 150%was obtained in the magnetic tunnel junctions and linear response to an in-plane magnetic field was successfully achieved.A high sensitivity of 1.85%/Oe was achieved due to a designed soft pinned sensing layer of CoFeB/NiFe/Ru/IrMn.Furthermore,the voltage output sensitivity and the noise level of 10.7 mV/V/Oe,10 nT/Hz^(1/2)at 1 Hz and3.3 nT/Hz^(1/2)at 10 Hz were achieved in Full Wheatstone Bridge configuration.This kind of magnetic sensors can be used in the field of smart grid for current detection and sensing.
关 键 词:CONFIGURATION effect COUPLING
分 类 号:TP212[自动化与计算机技术—检测技术与自动化装置]
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