退火温度对基于Bi_(1.5)Zn_(1.05)Nb_(1.5)O_(7)栅绝缘层的ZnO-TFTs性能的影响  

Effect of Annealing Temperature on Performance of ZnO-TFTs Based on Bi_(1.5)Zn_(1.05)Nb_(1.5)O_(7) Gate Insulator

作　　者：张琦[1] 叶伟[1] 孙芳莉 萧生 杜鹏飞 ZHANG Qi;YE Wei;SUN Fang-li;XIAO Sheng;DU Peng-fei(School of Mechanical Engineering,Shaanxi University of Technology,Hanzhong,Shaanxi 723001,China;North Industries Group Pinance Company,Ltd.,Xi’an,Shaanxi 710043,China)

机构地区：[1]陕西理工大学机械工程学院,陕西汉中723001 [2]西北工业集团有限公司,陕西西安710043

出　　处：《电子学报》2022年第2期455-460,共6页Acta Electronica Sinica

基　　金：陕西省教育厅专项科学研究计划(No.17JK0144,No.18JK0151);陕西理工大学人才启动项目(No.SLGQD2017-19)。

摘　　要：具有高介电常数的Bi_(1.5)Zn_(1.05)Nb_(1.5)O_(7)薄膜存在氧空位和陷阱缺陷,因此,使用Bi_(1.5)Zn_(1.05)Nb_(1.5)O_(7)作为栅绝缘层的ZnO-TFTs具有高的界面费米能级钉扎效应和低的电学性能.为了解决这些问题,提高器件性能,本文采用射频磁控溅射制备了以Bi_(1.5)Zn_(1.05)Nb_(1.5)O_(7)为栅绝缘层的ZnO-TFTs,同时,详细研究了300℃、400℃、500℃和600℃等退火温度对ZnO-TFTs性能的影响,研究结果表明,随着退火温度的升高,Bi_(1.5)Zn_(1.05)Nb_(1.5)O_(7)栅绝缘层和ZnO-TFTs的性能先升高后降低,在退火温度为500℃时,Bi_(1.5)Zn_(1.05)Nb_(1.5)O_(7)栅绝缘层和ZnO-TFTs的性能都得到了显著提高,电容密度从165 nF/cm^(2)升高到222 nF/cm^(2),开关比从103升高到105.Bi_(1.5)Zn_(1.05)Nb_(1.5)O_(7)thin films with high dielectric constant have oxygen vacancy and trap defects.Therefore,ZnO-TFTs using Bi_(1.5)Zn_(1.05)Nb_(1.5)O_(7)as gate insulator have high interface Fermi level pinning effect and low electrical proper⁃ties.To solve these problems and improve device performance,ZnO-TFTs with Bi_(1.5)Zn_(1.05)Nb_(1.5)O_(7) as gate insulator were pre⁃pared by RF magnetron sputtering.Meanwhile,the effect of the annealing temperature from 300℃to 600℃at an interval of 100℃on the performance of ZnO-TFTs was studied.The research results showed that with the increase of annealing temperature,the properties of Bi_(1.5)Zn_(1.05)Nb_(1.5)O_(7) gate insulator and ZnO-TFTs increased at first and then decreased.The per⁃formance of Bi_(1.5)Zn_(1.05)Nb_(1.5)O_(7)gate insulator and ZnO-TFTs was significantly improved at annealing temperature of 500℃.The capacitance density and I_(on)/I_(off) increased from 165 nF/cm^(2)to 222 nF/cm^(2)and from 10^(3) to 10^(5),respectively.

关 键 词：Bi_(1.5)Zn_(1.05)Nb_(1.5)O_(7)薄膜 氧化锌薄膜晶体管 射频磁控溅射 退火温度 电容密度 高介电常数 

分 类 号：TN321.5[电子电信—物理电子学]