一种Sc_(2)O_(3)掺杂Y-Gd-Hf-O压制式直热式阴极发射特性研究  

Investigation on Thermionic Emission Characteristics of Pressed Sc_(2)O_(3) Doped Y-Gd-Hf-O Directly-heated Cathode

作　　者：王兴起 王小霞 罗积润 漆世锴 李云 WANG Xingqi;WANG Xiaoxia;LUO Jirun;QI Shikai;LI Yun(Aerospace Information Research Institute,Chinese Academy of Sciences,Beijing 100190,China;School of Electronic Engineering,Jiujiang University,Jiujiang 332005,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院空天信息创新研究院,北京100190 [2]九江学院电子工程学院,九江332005 [3]中国科学院大学,北京100049

出　　处：《电子与信息学报》2022年第4期1382-1387,共6页Journal of Electronics & Information Technology

基　　金：国家自然科学基金(61771454)。

摘　　要：为了提高Y-Gd-Hf-O阴极耐电子轰击能力,该文通过高能球磨、压制和高温氢气烧结,制备了一种Sc_(2)O_(3)掺杂Y-Gd-Hf-O压制式直热式阴极。该阴极在1550°C工作温度下,经过10 W电子连续轰击480 h后,发射电流密度下降至初始值的87.5%,表现出良好的耐电子轰击能力。阴极表面的微观形貌、成分组成分析表明,经压制后氢气气氛烧结,阴极表面呈陶瓷状结构形态,有利于提高阴极的耐电子轰击能力;经高温烧结、激活后表面形成了n型半导体Y_(2)O_(3-x)层,对改善阴极表面导电性、降低逸出功和提高热发射有促进作用。To improve the Y-Gd-Hf-O cathodes anti-electron bombardment ability,a scandia doped cathode is prepared by a pressing technique combined with sintering in hydrogen atmosphere.The tested result shows that the emitting current from the cathode operating at 1550°C can remain to 87.5%of the initial one after continuous electron bombardment of 10 W for 480 h,reflecting a better anti-electron bombardment capability.The surface microstructure analysis result indicates that a cermet structure has been formed.A n-type semiconductor Y_(2)O_(3-x) layer has generated on the cathode surface after being sintered and activated at high temperature,which is favorable for enhancing the thermionic emission,improving the surface conductivity,and lowering the work function.

关 键 词：阴极热发射 磁控管 逸出功 耐电子轰击 

分 类 号：O462.1[理学—电子物理学]