关于热辐射反射环优化直拉单晶硅生长的模拟研究  

Simulation Study on Optimization of CZ Crystal Silicon Growth by Thermal Radiation Reflecting Ring

作　　者：王利伟 Wang Liwei(Dalian Linton Technologies Group,Dalian 116036,China)

机构地区：[1]大连连城数控机器股份有限公司,辽宁大连116036

出　　处：《科学技术创新》2022年第10期49-52,共4页Scientific and Technological Innovation

摘　　要：基于对CZ法单晶硅生长热物理过程的分析,本文针对其传热过程进行优化,创造性的提出可以提高直拉单晶生长速度的热辐射反射环。通过CGSim软件的长晶模拟研究,证明反射环结构具有较好的优化单晶棒传热的效果。本文中模拟研究的案例显示,将文中所提出的反射环结构应用在当前炉型结构中时,拉速提高的潜力在15%左右。Based on the analysis of the thermophysical process of CZ monocrystalline silicon growth,this paper optimizes its heat transfer process,and creatively puts forward a thermal radiation reflection ring which can improve the growth speed of CZ monocrystalline silicon.By using CGSim software,it is proved that the reflective ring structure has a good effect of optimizing the heat transfer of single crystal rod.In this paper,the simulation case shows that when the reflective ring structure proposed in this paper is applied to the current furnace structure,the potential to increase the growth speed is about 15%.

关 键 词：CZ(Czochralski)法 单晶硅生长 热辐射 反射环 CGSim 

分 类 号：O782[理学—晶体学]