Growth and properties of hydrogenated microcrystalline silicon thin films prepared by magnetron sputtering with different substrate temperatures  

作　　者：Lin-Qing Wang Wei-Yan Wang Jin-Hua Huang Rui-Qin Tan Wei-Jie Song Jian-Min Chen 

机构地区：[1]State Key Laboratory of Solid Lubrication,Lanzhou Institute of Chemical Physics,Chinese Academy of Sciences,Lanzhou 730000,China [2]University of Chinese Academy of Sciences,Beijing 100049,China [3]Ningbo Institute of Material Technology and Engineering,Chinese Academy of Sciences,Ningbo 315201,China [4]Faculty of Information Science and Engineering,Ningbo University,Ningbo 315211,China

出　　处：《Rare Metals》2022年第3期1037-1042,共6页稀有金属（英文版）

基　　金：financially supported by the Young Scientists Fund of the National Natural Science Foundation of China (No. 61106096);the Natural Science Foundation of Ningbo, China (No. 2012A610120)。

摘　　要：Hydrogenated microcrystalline silicon (μcSi:H) thin films were deposited by an radio frequency (RF)(13.56 MHz) magnetron sputtering at different substrate temperatures (100–300℃), and the influences of substrate temperature on the growth and properties ofμc-Si:H thin films were investigated. Surface roughness and crystallinity of the thin films increase as substrate temperature increases. And all thin films are at the transition region(X_(c)=49.2%~61.0%). Theμc-Si:H thin films deposited at lower substrate temperature (≤200℃) represent a weak(220) preferred orientation, while the thin films deposited at higher substrate temperature (≥250℃) exhibit a weak(111) preferred orientation. The μc-Si:H thin films have a dense structure, and the structural compactness of the thin films slightly increases with substrate temperature increasing. The Fourier transform infrared spectroscopy (FTIR) results indicate that theμc-Si:H thin films have a low hydrogen content (3.9 at%–5.6 at%), which is in favor of reducing light-induced degradation effect.

关 键 词：μc-Si:H thin films Magnetron sputtering Substrate temperature Hydrogen content 

分 类 号：TB383.2[一般工业技术—材料科学与工程]