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作 者:Zheyang Zheng Han Xu Li Zhang Kevin J.Chen
出 处:《Fundamental Research》2021年第6期661-671,共11页自然科学基础研究(英文版)
基 金:supported in part by the Hong Kong Research Impact Fund(Grant No.R6008-18);the Shen-zhen Science and Technology Innovation Commission(Grant No.SGDX2020110309460101).
摘 要:Gallium nitride(GaN)-based power conversion systems exhibit striking competitiveness in realizing compact and high-efficiency power management modules.Recently emerging GaN-based p-channel field-effect transistors(FETs)and monolithic integration techniques enable the implementation of GaN-based complementary logic(CL)circuits and thereby offer an additional pathway to improving the system-level energy efficiency and functional-ity.In this article,holistic analyses are conducted to evaluate the potential benefits of introducing GaN CL circuits into the integrated power systems,based on the material limit of GaN and state-of-the-art experimental results.It is revealed that the propagation delay of a single-stage CL gate based on the commercial p-GaN gate power HEMT(high-electron-mobility transistor)platform could be as short as sub-nanosecond,which sufficiently satis-fies the requirement of power conversion systems typically with operating frequencies less than 10 MHz.With the currently adopted n-FET-based logic gates(e.g.,directly coupled FET logic)replaced by CL gates,the power consumption of peripheral logic circuits could be substantially suppressed by more than 10^(3) times,mainly due to the elimination of the pronounced static power loss.Consequently,the energy efficiency of the entire system could be substantially improved.
关 键 词:Gallium nitride Complementary logic circuits Power integration Energy efficiency
分 类 号:TM13[电气工程—电工理论与新技术]
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