硅基光电异质集成的发展与思考  

Development and Thinking of Silicon Photonics Heterogenous Integration

作　　者：王子昊 王霆[1,2] 张建军 WANG Zihao;WANG Ting;Zhang Jianjun(Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;Songshan Lake Materials Laboratory,Dongguan 523808,China)

机构地区：[1]中国科学院物理研究所,北京100190 [2]松山湖材料实验室,东莞523808

出　　处：《中国科学院院刊》2022年第3期360-367,共8页Bulletin of Chinese Academy of Sciences

基　　金：中国科学院战略性先导科技专项(B类)(XDB30000000)。

摘　　要：光电子器件与传统微电子硅基互补金属氧化物半导体(CMOS)芯片的集成是未来信息技术的重要发展方向。现有硅基光电子集成技术得益于CMOS技术高集成度、低成本的优势,但主要采用硅材料制成,受限于硅材料本身的光电性质。硅基光电异质集成技术在利用CMOS晶圆制造优势的同时可兼容更多性能优异的光电异质材料,是未来光电集成技术的主要发展方向。文章介绍了该方向世界范围内的飞速发展形势及我国在该领域的研究基础,探讨了该领域未来的发展趋势和蕴藏的重要创新机遇。Integrated photonics are fast-developing research field for next generation information technology.Current silicon photonic integrated chips strongly benefit from low-cost and high-density integration properties of existing CMOS technology.But limited by the physical properties of silicon,it is not a perfect material for different types of optoelectronic devices,such as laser sources,modulators,and infrared detectors.Therefore,heterogeneous integration is proposed by combining the advantages of CMOS process and superior opto-electric properties of heterogenous material systems,that can be an essential step towards next generation integrated optoelectronic chips.Here,this paper introduces the rapid progress of integrated photonics nationally and worldwide,while discusses the potential directions and opportunities in this field.

关 键 词：光电集成 硅基光电子 异质集成 

分 类 号：TN15[电子电信—物理电子学]