Nonlinear optical properties in n-type quadrupleδ-doped GaAs quantum wells  

作　　者：Humberto Noverola-Gamas Luis Manuel Gaggero-Sager Outmane Oubram 

机构地区：[1]Division Academica de Ingenierıa y Arquitectura,Universidad Juarez Autonoma de Tabasco,Carretera Cunduacan-Jalpa de Mendez Km.1 Col.La Esmeralda,Cunduacan,8660,Mexico [2]Centro de Investigacion en Ingenierıa y Ciencias Aplicadas,Universidad Autonoma del Estado de Morelos,Av.Universidad 1001 Col.Chamilpa,Cuernavaca,62209,Mexico [3]Facultad de Ciencias Quımicas e Ingenierıa,Universidad Autonoma del Estado de Morelos,Av.Universidad 1001 Col.Chamilpa,Cuernavaca,62209,Mexico

出　　处：《Chinese Physics B》2022年第4期348-351,共4页中国物理B（英文版）

摘　　要：The effects of the interlayer distance on the nonlinear optical properties of n-type quadrupleδ-doped GaAs quantum well were theoretically investigated.Particularly,the absorption coefficient and the relative refraction index change were determined.In the effective mass approach and within the framework of the Thomas-Fermi theory,the Schrodinger equation was resolved.Thereby,the subband energy levels and their respective wave functions were calculated.The variations in the nonlinear optical properties were determined by using the density matrix solutions.The achieved results demonstrate that the interlayer distance causes optical red-shift on nonlinear optical properties.Therefore,it can be deduced that the suitably chosen interlayer distance can be used to tune optical properties within the infrared spectrum region in optoelectronic devices such as far-infrared photo-detectors,high-speed electronic-optical modulators,and infrared lasers.

关 键 词：DELTA-DOPING n-type GaAs layers electronic structure non-linear optical properties 

分 类 号：O437[机械工程—光学工程] TB30[理学—光学]