Self-screening of the polarized electric field in wurtzite gallium nitride along[0001]direction  

作　　者：Qiu-Ling Qiu Shi-Xu Yang Qian-Shu Wu Cheng-Lang Li Qi Zhang Jin-Wei Zhang Zhen-Xing Liu Yuan-Tao Zhang Yang Liu 丘秋凌;杨世旭;吴千树;黎城朗;张琦;张津玮;刘振兴;张源涛;刘扬(School of Electronics and Information Technology,Sun Yat-Sen University,Guangzhou 510275,China;States Key Laboratory of Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012,China)

机构地区：[1]School of Electronics and Information Technology,Sun Yat-Sen University,Guangzhou 510275,China [2]States Key Laboratory of Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012,China

出　　处：《Chinese Physics B》2022年第4期589-596,共8页中国物理B（英文版）

基　　金：Project supported by the Key Research and Development Program of Guangdong Province,China(Grant No.2020B010174003)。

摘　　要：The strong polarization effect of GaN-based materials is widely used in high-performance devices such as white-lightemitting diodes(white LEDs),high electron mobility transistors(HEMTs),and GaN polarization superjunctions.However,the current researches on the polarization mechanism of GaN-based materials are not sufficient.In this paper,we studied the influence of polarization on electric field and energy band characteristics of Ga-face GaN bulk materials by using a combination of theoretical analysis and semiconductor technology computer-aided design(TCAD) simulation.The selfscreening effect in Ga-face bulk GaN under ideal and non-ideal conditions is studied respectively.We believe that the formation of high-density two-dimensional electron gas(2 DEG) in GaN is the accumulation of screening charges.We also clarify the source and accumulation of the screening charges caused by the GaN self-screening effect in this paper and aim to guide the design and optimization of high-performance GaN-based devices.

关 键 词：gallium nitride polarized electric field self-screening effect surface states donor doping intrinsic thermal excitation 

分 类 号：O469[理学—凝聚态物理]