Fast-switching SOI-LIGBT with compound dielectric buried layer and assistant-depletion trench  

作　　者：Chunzao Wang Baoxing Duan Licheng Sun Yintang Yang 王春早;段宝兴;孙李诚;杨银堂(Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China;Department of Physics and Electronic Information,Shaoxing University,Shaoxing 312000,China)

机构地区：[1]Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China [2]Department of Physics and Electronic Information,Shaoxing University,Shaoxing 312000,China

出　　处：《Chinese Physics B》2022年第4期647-652,共6页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China(Grant No.2015CB351906);Science Foundation for Distinguished Young Scholars of Shaanxi Province,China(Grant No.2018JC-017)。

摘　　要：A lateral insulated gate bipolar transistor(LIGBT)based on silicon-on-insulator(SOI)structure is proposed and investigated.This device features a compound dielectric buried layer(CDBL)and an assistant-depletion trench(ADT).The CDBL is employed to introduce two high electric field peaks that optimize the electric field distributions and that,under the same breakdown voltage(BV)condition,allow the CDBL to acquire a drift region of shorter length and a smaller number of stored carriers.Reducing their numbers helps in fast-switching.Furthermore,the ADT contributes to the rapid extraction of the stored carriers from the drift region as well as the formation of an additional heat-flow channel.The simulation results show that the BV of the proposed LIGBT is increased by 113%compared with the conventional SOI LIGBT of the same length L_(D).Contrastingly,the length of the drift region of the proposed device(11.2μm)is about one third that of a traditional device(33μm)with the same BV of 141 V.Therefore,the turn-off loss(E_(OFF))of the CDBL SOI LIGBT is decreased by 88.7%compared with a conventional SOI LIGBT when the forward voltage drop(VF)is 1.64 V.Moreover,the short-circuit failure time of the proposed device is 45%longer than that of the conventional SOI LIGBT.Therefor,the proposed CDBL SOI LIGBT exhibits a better V_(F)-E_(OFF)tradeoff and an improved short-circuit robustness.

关 键 词：lateral insulated gate bipolar transistor breakdown voltage electric field modulation turn-off loss 

分 类 号：TN322.8[电子电信—物理电子学]