Butt-joint regrowth method by MOCVD for integration of evanescent wave coupled photodetector and multi-quantum well semiconductor optical amplifier  

作　　者：Feng Xiao Qin Han Han Ye Shuai Wang Zi-Qing Lu Fan Xiao 肖锋;韩勤;叶焓;王帅;陆子晴;肖帆(State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Chinese Physics B》2022年第4期686-692,共7页中国物理B（英文版）

基　　金：Project supported by the National Key R&D Program of China(Grant No.2020YFB1805701);the National Natural Foundation of China(Grant Nos.61934003,61635010,and 61674136);Beijing Natural Science Foundation,China(Grant No.4194093)。

摘　　要：We have realized integration of evanescent wave coupled photodetector(ECPD)and multi-quantum well(MQW)semiconductor optical amplifier(SOA)on MOCVD platform by investigating butt-joint regrowth method of thick InP/InGaAsP waveguides to deep etched SOA mesas.The combination of inductively coupled plasma etching and wet chemical etching technique has been studied to define the final mesa shape before regrowth.By comparing the etching profiles of different non-selective etchants,we have obtained a controllable non-reentrant mesa shape with smooth sidewall by applying one step 2 HBr:2 H_(3)PO_(4):K_(2)Cr_(2)O_(7)wet etching.A high growth temperature of 680℃is found helpful to enhance planar regrowth.By comparing the growth morphologies and simulating optical transmission along different directions,we determined that waveguides should travel across the regrowth interface along the[110]direction.The relation between growth rate and mask design has been extensively studied and the result can provide an important guidance for future mask design and vertical alignment between the active and passive cores.ECPD-SOA integrated device has been successfully achieved by this method without further regrowth steps and provided a responsivity of 7.8 A/W.The butt-joint interface insertion loss is estimated to be 1.05 dB/interface.

关 键 词：butt-joint regrowth etching profile non-reentrant mesa photonic integration 

分 类 号：TN36[电子电信—物理电子学] TN304.055