Edge assisted epitaxy of CsPbBr_(3)nanoplates on Bi_(2)O_(2)Se nanosheets for enhanced photoresponse  

作　　者：Haotian Jiang Xing Xu Chao Fan Beibei Dai Zhuodong Qi Sha Jiang Mengqiu Cai Qinglin Zhang 蒋浩天;徐兴;樊超;代贝贝;亓卓栋;蒋莎;蔡孟秋;张清林(Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education,School of Physics and Electronics,Hunan University,Changsha 410082,China)

机构地区：[1]Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education,School of Physics and Electronics,Hunan University,Changsha 410082,China

出　　处：《Chinese Physics B》2022年第4期693-699,共7页中国物理B（英文版）

基　　金：the National Natural Science Foundation of China(Grant No.51772088);Hunan Provincial Innovation Foundation for Postgraduate,China(Grant No.CX20200422)。

摘　　要：Bi_(2)O_(2)Se has been proved to be a promising candidate for electronic and optoelectronic devices due to their unique physical properties.However,it is still a great challenge to construct the heterostructures with direct epitaxy of hetero semiconductor materials on Bi_(2)O_(2)Se nanosheets.Here,a two-step chemical vapor deposition(CVD)route was used to directly grow the CsPbBr_(3)nanoplate-Bi_(2)O_(2)Se nanosheet hetero structures.The CsPbBr_(3)nanoplates were selectively grown on the Bi_(2)O_(2)Se nanosheet along the edges,where the dangling bonds provide the nucleation sites.The epitaxial relationships between CsPbBr3 and Bi_(2)O_(2)Se were determined as[200]_(Bi_(2)O_(2)Se)‖[110]_(CsPbBr_(3))and[110]_(Bi_(2)O_(2)Se)‖[200]_(CsPbBr_(3))by transmission electron microscopy characterization.The photoluminescence(PL)results reveal that the formation of heterostructures results in the remarkable PL quenching due to the type-Ⅰband arrangement at CsPbBr_(3)/Bi_(2)O_(2)Se interface,which was confirmed by ultraviolet photoelectron spectroscopy(UPS)and Kelvin probe measurements,and makes the photogenerated carriers transfer from CsPbBr_(3)to Bi_(2)O_(2)Se.Importantly,the photodetectors based on the heterostructures exhibit a 4-time increase in the responsivity compared to those based on the pristine Bi_(2)O_(2)Se sheets,and the fast rise and decay time in microsecond.These results indicate that the direct epitaxy of the CsPbBr_(3)plates on the Bi_(2)O_(2)Se sheet may improve the optoelectronic performance of Bi_(2)O_(2)Se based devices.

关 键 词：Bi_(2)O_(2)Se heterostructures photogenerated carriers PHOTORESPONSE 

分 类 号：TB383.1[一般工业技术—材料科学与工程] TN304.054[电子电信—物理电子学]