Spatially-separated and photo-enhanced semiconductor corrosion processes for high-efficient and contamination-free electrochemical nanoimprint lithography  

作　　者：Hantao Xu Lianhuan Han Jian-Jia Su Zhong-Qun Tian Dongping Zhan 

机构地区：[1]Key Laboratory of Physical Chemistry of Solid Surfaces(PCOSS),Engineering Research Center of Electrochemical Technologies of Ministry of Education,Department of Chemistry,College of Chemistry and Chemical Engineering,Xiamen University,Xiamen 361005,China [2]Department of Mechanical and Electrical Engineering,School of Aerospace Engineering,Xiamen University,Xiamen 361005,China

出　　处：《Science China Chemistry》2022年第4期810-820,共11页中国科学（化学英文版）

基　　金：supported by the National Natural Science Foundation of China(21827802,22021001);the Program of Introducing Talents of Discipline to Universities of China(111 Project)(B08027,B17027)。

摘　　要：Free of any thermoplastic or photocuring resists, electrochemical nanoimprint lithography(ECNL) has emerged as an alternative nanoimprint way to fabricate three-dimensional micro/nano-structures(3D-MNSs) directly on a semiconductor wafer by a spatially-confined corrosion reaction induced by the metal/semiconductor contact potential. However, the consumption of electron acceptors in the ultrathin electrolyte between imprint mold and semiconductor wafer will slow down or even cease the corrosion rate. To solve this problem, we change the short-circuited corrosion cell into a spatially-separated primary cell: the imprint mold compacted gallium arsenide(GaAs) wafer in the anodic chamber while the platinum(Pt) plate connected to the imprint mold in the cathodic chamber. Thus, the GaAs corrosion rate will be stabilized in its limiting steady-state current density because of the abundant source of electron acceptors in the catholic chamber. The corrosion processes can be photo-enhanced by white-light illumination. Consequently, both the accuracy and the efficiency are promoted dramatically, which are demonstrated by the excellent performance of the fabricated binary optical elements. Moreover, the contamination problem caused by the electron acceptors is totally avoided. All the results prove that this novel ECNL mode is competitive and prospective in imprinting 3D-MNSs directly on semiconductor wafer.

关 键 词：nanoimprint lithography electrochemical microfabrication semiconductor corrosion semiconductor microdevices 3D functional micro/nano-structures 

分 类 号：TB383.1[一般工业技术—材料科学与工程] TN305[电子电信—物理电子学]