限制电流对Ta/BaTiO_(3)/Al_(2)O_(3)/ITO忆阻器的开关比和稳定性调控  

Facilitation of compliance current for resistive switching and stability of Ta/BaTiO_(3)/Al_(2)O_(3)/ITO

作　　者：何朝滔 卢羽 李秀林 陈鹏[1] He Chao-Tao;Lu Yu;Li Xiu-Lin;Chen Peng(School of Physics Science and Technology,Southwest University,Chongqing 400715,China)

机构地区：[1]西南大学物理科学与技术学院,重庆400715

出　　处：《物理学报》2022年第8期245-250,共6页Acta Physica Sinica

摘　　要：利用磁控溅射技术沉积了Ta/BaTiO_(3)/Al_(2)O_(3)/ITO多层薄膜,观察到该结构中的电阻开关现象受到限制电流的调控.在限制电流大小为10^(-2)A时,器件中的电阻开关现象达到最优.Ta/BaTiO_(3)/Al_(2)O_(3)/ITO多层薄膜的电阻开关具有良好的可重复性和稳定性.本文使用空间限制电流的传导模型对Ta/BaTiO_(3)/Al_(2)O_(3)/ITO器件中受限制电流调控的电阻开关传导机理进行了解释.In this work,Ta/BaTiO_(3)/Al_(2)O_(3) multi-layer thin film is deposited on indium tin oxide substrates by using the magnetron sputtering technology.Obvious resistive switching performance can be observed by increasing the compliance current.Ohmic and space charge limited current conduction mechanisms are demonstrated in Ta/BaTiO_(3)/Al_(2)O_(3).The reproducible and stable resistive switching behaviors in Ta/BaTiO_(3)/Al_(2)O_(3)/ITO device at Icc=10^(-2) A are reported.The results show that no obvious degradation is found after 365 successive cycles tests.

关 键 词：电阻开关 氧空位迁移 限制电流 焦耳热 

分 类 号：TN60[电子电信—电路与系统] O441.1[理学—电磁学]