Enhanced ablation efficiency for silicon by femtosecond laser microprocessing with GHz bursts in MHz bursts(BiBurst)  

作　　者：Francesc Caballero-Lucas Kotaro Obata Koji Sugioka 

机构地区：[1]RIKEN Center for Advanced Photonics,2-1 Hirosawa,Wako-shi,Saitama 351-0198,Japan

出　　处：《International Journal of Extreme Manufacturing》2022年第1期75-83,共9页极端制造（英文）

基　　金：partially supported by MEXT Quantum Leap Flagship Program(MEXT Q-LEAP)Grant Number JPMXS0118067246。

摘　　要：Ultrashort laser pulses confine material processing to the laser-irradiated area by suppressing heat diffusion,resulting in precise ablation in diverse materials.However,challenges occur when high speed material removal and higher ablation efficiencies are required.Ultrafast burst mode laser ablation has been proposed as a successful method to overcome these limitations.Following this approach,we studied the influence of combining GHz bursts in MHz bursts,known as Bi Burst mode,on ablation efficiency of silicon.Bi Burst mode used in this study consists of multiple bursts happening at a repetition rate of 64 MHz,each of which contains multiple pulses with a repetition rate of 5 GHz.The obtained results show differences between Bi Burst mode and conventional single pulse mode laser ablation,with a remarkable increase in ablation efficiency for the Bi Burst mode,which under optimal conditions can ablate a volume4.5 times larger than the single pulse mode ablation while delivering the same total energy in the process.

关 键 词：BiBurst mode GHz burst laser ablation surface microfabrication 

分 类 号：TN249[电子电信—物理电子学] TQ127.2[化学工程—无机化工]