微波辅助烧结Al掺杂ZnO陶瓷的缺陷和光学性能研究  

Defects and optical properties of microwave-assisted sintered Al-doped ZnO ceramics

作　　者：王晨瑞 苗瑞霞 张德栋 李永锋 WANG Chenrui;MIAO Ruixia;ZHANG Dedong;LI Yongfeng(School of Electronic Engineering,Xi􀆳an University of Posts and Telecommunications,Xi􀆳an710121,China)

机构地区：[1]西安邮电大学电子工程学院,陕西西安710121

出　　处：《电子元件与材料》2022年第4期356-361,共6页Electronic Components And Materials

基　　金：国家自然科学基金(51302215)。

摘　　要：采用微波辅助烧结法在空气气氛中以1100℃烧结20 min制备出不同Al_(2)O_(3)掺杂量(摩尔分数0%~6%)的ZnO陶瓷。通过XRD、SEM、霍尔实验、UV-Vis光谱、Raman光谱、PL光谱的表征,研究了Al_(2)O_(3)掺杂量的变化对微波辅助烧结ZnO陶瓷的物相结构、微观组织、电学性能、光学性能的影响。实验结果表明,Al_(2)O_(3)掺杂并没有改变ZnO陶瓷的六方纤锌矿结构,随着Al_(2)O_(3)掺杂量的增加,在ZnO晶界处逐渐形成ZnAl_(2) O_(4)尖晶石相,ZnO晶粒尺寸逐渐减小;微波辅助烧结所制备ZnO陶瓷的室温电阻率和光学带隙随Al_(2)O_(3)掺杂量的增加呈先减小后增加的趋势;当Al_(2)O_(3)掺杂量为摩尔分数4%时,所制备ZnO陶瓷的综合性能最好,样品的室温电阻率为1783Ω·cm,光学带隙为3.04 eV;随着Al_(2)O_(3)掺杂量的增加,Al_(Zn)施主缺陷和深能级缺陷浓度增加,所制备ZnO陶瓷的Raman特征峰强度减弱,PL发光峰强度则呈现增强的趋势。Al_(Zn)缺陷的产生有助于载流子浓度的增加和杂质带的形成,从而改善微波辅助烧结所制备ZnO陶瓷的电学性能和光学性能。Al_(2)O_(3)(mole fraction of 0%-6%)doped ZnO ceramics were fabricated by microwave-assisted sintering at 1100℃for 20 min in air.The effects of Al_(2)O_(3)amounts on the phase structure,microstructure,electrical properties,and optical properties of as-prepared ZnO ceramics were investigated by XRD,SEM,Hall test,UV-Vis spectroscopy,Raman spectroscopy,and PL spectroscopy.The results show that Al_(2)O_(3)doping does not change the hexagonal wurtzite structure of as-prepared ZnO ceramics.With the increase of Al_(2)O_(3)content,the content of spinel phase ZnAl_(2)O_(4)increases while the grain size gradually decreases.The room temperature resistivity and optical band gap decrease firstly and then increase with the increase of Al_(2)O_(3)content.The Al-doped ZnO ceramics with 4%Al_(2)O_(3)addition exhibits the optimized characteristics,in which the room temperature resistivity is 1783Ω·cm,and the optical band gap is 3.04 eV.With the increase of Al_(2)O_(3)content,the peak intensity of Raman characteristic peak decreases,while the peak intensity of PL emission increases.The formation of Al_(Zn)defects would cause the increase of the carrier concentration and the formation of impurity bands,resulting in the improvement of the electrical and optical properties of microwave-assisted sintered ZnO ceramics.

关 键 词：ZnO陶瓷 Al_(2)O_(3)掺杂 微波辅助烧结 缺陷 光学性能 

分 类 号：TM283[一般工业技术—材料科学与工程]