基于IPD的紧凑型高性能N77带通滤波器  被引量:2

Compact High Performance N77 Band-Pass Filter with IPD Technology

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作  者:代传相 李小珍 邢孟江 刘永红[1] DAI Chuan-xiang;LI Xiao-zhen;XING Meng-jiang;LIU Yong-hong(College of Electronic Science and Engineering,University cf Electronic Science and Technology of China,Chengdu 611731,China;School of Information Engineering,Kunming Institute,Kunming 650214,China)

机构地区:[1]电子科技大学电子科学与工程学院,成都611731 [2]昆明学院信息工程学院,昆明650214

出  处:《微波学报》2022年第2期52-55,60,共5页Journal of Microwaves

基  金:国家自然科学基金(61864004)。

摘  要:5G通信系统向小型化、集成化、低功耗、高性能方向发展,要求5G滤波器性能更高、体积更小。文中将切比雪夫Ⅱ型带通滤波器原型电路进行等效变换,在减少插入损耗的同时在低频端引入两个传输零点;通过合理的空间布局以及对元件连接端口进行阻抗匹配优化,利用元件的寄生参数在高频端引入两个传输零点。从电路原理和三维结构两个方向进行研究,在小尺寸情况下实现了较高阻带抑制和较小带内损耗。设计并加工了GaAs衬底的芯片滤波器,实测表明,仿真结果与测试结果相符,滤波器尺寸仅为1.0 mm×0.8 mm×0.1 mm。The development of 5 G communication system towards miniaturization, integration, low-power consumption and high performance requires higher performance and smaller size of 5 G filter. The prototype circuit of Chebyshev Ⅱ bandpass filter is transformed to reduce the insertion loss and introduce two transmission zeros at the low frequency end;Two transmission zeros are introduced into the high frequency terminal by using parasitic parameters of the components through reasonable spatial layout and impedance matching optimization of the connecting ports of the components. From the two directions of circuit principle and three-dimensional structure, high stopband suppression and smaller in-band loss are achieved in small size. The GaAs substrate chip filter is designed and machined. The test results show that the simulation results are consistent with the test results, and the filter size is only 1.0 mm×0.8 mm×0.1 mm.

关 键 词:5G通信技术 砷化镓集成无源器件 带通滤波器 N77频段 

分 类 号:TN713.5[电子电信—电路与系统] TN929.5

 

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