太赫兹InP DHBT器件研究  

Study on THz InP DHBT Device

作　　者：陈卓 何庆国[1] 崔雍 周国[1] CHEN Zhuo;HE Qing-guo;CUI Yong;ZHOU Guo(The 13th Research Institute of CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微波学报》2022年第2期76-79,85,共5页Journal of Microwaves

摘　　要：InP DHBT器件具有优异的高频特性、良好的散热、击穿和噪声性能,是实现超高频、低噪声功率放大电路设计的最具性能优势的器件之一。文中简要介绍和分析了影响高频器件电性能参数的主要因素,优化了材料结构和版图设计,最终采用三台面湿法化学腐蚀工艺、自终止工艺、自对准光刻工艺和空气桥工艺等加工工艺研制得到发射极线宽0.7μm的InP DHBT器件,并配套集成了平行板电容和金属薄膜电阻,片内器件一致性良好。不断缩小器件基区台面面积,器件电性能最终实现:最大直流增益β为30,10μA下的集电极-发射极击穿电压BV_(CEO)为3.2 V,截止频率f(fr)为358 GHz,最大振荡频率f(fmax)为407 GHz。测试结果表明,该器件可应用于220 GHz放大器、100 GHz以下压控振荡器等数模混合集成电路。InP DHBT has excellent high frequency characteristic, good heat dissipation, breakdown and noise performance. It is one of the devices with the most performance advantages in realizing ultra-high-frequency(UHF) low noise and power amplifier circuit design. In this paper, the main factors affecting the electrical performance parameters of high frequency InP DHBT devices are briefly introduced and analyzed. And combined with the factors, the device was optimized in the aspects of material structure and layout design. The device with emitter line width of 0.7 μm was developed by using three-mesa wet etching process, self-alignment process, self-termination process and air bridge process. Metal film resistor and MIM capacitor were also integrated in the process. And the device consistency on the chip was good. By reducing the mesa area of the base region, the electrical performance of the 0.7 μm×6 μm InP DHBT was finally achieved: the maximum DC gain β was 30, the breakdown voltage can reach 3.2 V at 10 μA, the current gain cut-off frequency was measured of 358 GHz and the maximum oscillation frequency was measured of 407 GHz, which can meet the design requirements of digital analog hybrid integrated circuits, such as 220 GHz amplifier, voltage controlled oscillator(VCO) under 100 GHz.

关 键 词：磷化铟双异质结双极型晶体管 制造工艺 高频器件 空气桥 

分 类 号：TN322.8[电子电信—物理电子学] O441.4[理学—电磁学]