一种适用于低电压应用的低漏电高性能电荷泵  

A low-leakage high-performance charge pump for low voltage applications

作　　者：张云峰 李睿文 柳成林 程心[1] ZHANG Yunfeng;LI Ruiwen;LIU Chenglin;CHENG Xin(School of Electronic Science and Applied Physics,Hefei University of Technology,Hefei 230601,China)

机构地区：[1]合肥工业大学电子科学与应用物理学院,安徽合肥230601

出　　处：《合肥工业大学学报（自然科学版）》2022年第4期481-486,共6页Journal of Hefei University of Technology：Natural Science

基　　金：中央高校基本科研业务费专项资金资助项目(JZ2020YYPY0089,JZ2020HGQA0162)。

摘　　要：文章提出一种适用于低输入电压应用的新型电荷泵,电路采用一种由NMOS晶体管和小电容组合而成的电压转换开关,通过将开关的栅极连接到时钟信号以控制电荷泵各阶之间的节点电压的变化,使得电荷泵的电荷转移开关阻值降低,同时反向漏电流减小。以4阶电荷泵为例,采用SMIC 40 nm CMOS标准工艺库进行仿真以验证该结构的有效性。仿真结果表明,与传统的栅极偏置电荷泵相比,该结构的反向漏电流降低约78.9%,上升时间降低约45.4%,电压转换效率提高约4.1%,最大功率效率达到81.9%,轻负载时效率最大提高21.9%。A novel charge pump for low input voltage applications is proposed.The circuit makes use of a new type of voltage transfer switch composed of NMOS transistors and small capacitors.The gate of the switch is connected to the clock signal to control the change of node voltage value between each order of charge pump,so that the resistance of charge transfer switch of charge pump is reduced and the reverse leakage current is reduced.Taking the fourth-order charge pump as an example,the SMIC 40 nm CMOS standard process library is used for simulation to verify the effectiveness of the proposed new structure,the post-simulation results show that compared with the traditional gate bias charge pump,its reverse leakage current is reduced by about 78.9%,the rise time is reduced by about 45.4%,the voltage conversion efficiency increases by about 4.1%,the maximum power efficiency reaches 81.9%,and the power efficiency at light load increases by up to 21.9%.

关 键 词：电荷泵 电荷转移开关 低电压 栅极偏置 反向漏电流 

分 类 号：TN432[电子电信—微电子学与固体电子学]