氧化锑锡纳米材料及其薄膜的制备和光电性能的研究进展  

Progress in the Preparation and Photoelectrical Properties of Antimony Tin Oxide Nanomaterials and Their Thin Films

作　　者：康浩 杨明庆 牛春晖[1] 刘力双[1] 王京飞 吕勇[1] KANG Hao;YANG Mingqing;NIU Chunhui;LIU Lishuang;WANG Jingfei;LV Yong(School of Instrumentation Science and Opto-Electronics Engineering,Beijing Information Science and Technology University,Beijing 100192,China)

机构地区：[1]北京信息科技大学仪器科学与光电工程学院,北京100192

出　　处：《中国材料进展》2022年第3期197-205,共9页Materials China

基　　金：国家自然科学基金资助项目(21607158);“十三五”装备预研共用技术和领域基金项目(41414050205);国防军工重点计量科研项目(JSJL2019208B001)。

摘　　要：氧化锑锡因其固有的高可见光透过率、良好的红外屏蔽性能和导电性,可应用于节能建筑、光电器件以及军事隐身等领域,得到了广泛的研究。主要概述了氧化锑锡纳米材料及其薄膜制备技术的研究现状,介绍了沉淀法、溶胶-凝胶法、水热法/溶剂热法等纳米材料制备技术,以及喷雾热解法、脉冲激光沉积法、磁控溅射法和涂覆法等薄膜制备技术,分析了锑掺杂浓度、干燥方式、煅烧温度、氧气流量、薄膜厚度等工艺参数对氧化锑锡纳米材料及其薄膜的结构特征、光电性能的影响。介绍了氧化锑锡薄膜在光电、建筑、军事等领域的应用现状,总结了各种制备技术的优缺点,并就该领域存在的问题及未来的研究和应用方向进行了讨论和展望。Antimony tin oxide(ATO) has been extensively studied in energy-saving buildings, photoelectric devices and military stealth technology due to its inherent high visible light transmittance, good infrared shielding performance and electrical conductivity. In this review, progresses in synthesis of ATO nanomaterials and their thin films in recent years are presented. The fabrication methods of ATO nanomaterials such as precipitation method, sol-gel method, hydrothermal method or solvent thermal method, as well as their films such as spray pyrolysis method, pulsed laser deposition method, magnetron sputtering method and coating method are reviewed in detail. The factors of antimony doping concentration, drying method, temperature, oxygen flow, thickness of film on the nanostructures and photoelectric properties of ATO and ATO films are discussed. The application of ATO films in the fields of optoelectronics, architecture and military are also introduced. Finally, the advantages and disadvantages of various fabrication methods are summarized, and current challenges faced in practical application and the trend of future development are presented and discussed.

关 键 词：氧化锑锡 纳米材料 薄膜 透过率 电阻率 

分 类 号：TB383[一般工业技术—材料科学与工程] O484.4[理学—固体物理]