Manipulating the morphology of CdS/Sb_(2)S_(3) heterojunction using a Mg-doped tin oxide buffer layer for highly efficient solar cells  

作　　者：Jiashuai Li Liangbin Xiong Xuzhi Hu Jiwei Liang Cong Chen Feihong Ye Jing Li Yongjie Liu Wenlong Shao Ti Wanga Chen Tao Guojia Fang 

机构地区：[1]Key Lab of Artificial Micro-and Nano-Structures of Ministry of Education of China,School of Physics and Technology,Wuhan University,Wuhan 430072,Hubei,China [2]School of Optoelectronic Engineering,Guangdong Polytechnic Normal University,Guangzhou 510665,Guangdong,China [3]Shenzhen Institute,Wuhan University,Shenzhen 518055,Guangdong,China

出　　处：《Journal of Energy Chemistry》2022年第3期374-381,I0010,共9页能源化学（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.62074117,61904126);the Natural Science Foundation of Hubei Province,China(Grant Nos.2019AAA020,2019CFB122);the Natural Science Foundation of Guangdong Province(2021A1515012594);Guangdong Province Office of Education(2020ZDZX2028);the Special Funds for the Development of Strategic Emerging Industries in Shenzhen(JCYJ20190808152609307)。

摘　　要：Antimony sulfide(Sb_(2)S_(3))is an appealing semiconductor as light absorber for solar cells due to its high absorption coefficient,appropriate band gap(~1.7 e V)and abundance of constituent elements.However,power conversion efficiency(PCE)of Sb_(2)S_(3)-based solar cells still lags much behind the theoretically predicted due to the imperfect energy level alignment at the charge transporting layer/Sb_(2)S_(3)interfaces and hence severe charge recombination.Herein,we insert a high-temperature sintered magnesium(Mg)-doped tin oxide(SnO_(2))layer between cadmium sulfide(Cd S)and fuorine doped tin oxide to form a cascaded energy level alignment and thus mitigate interfacial charge recombination.Simultaneously,the inserted Mg-doped Sn O_(2)buffer layer facilitates the growth of the neibouring Cd S film with orientation followed by Sb_(2)S_(3)film with larger grains and fewer pinholes.Consequently,the resultant Sb_(2)S_(3)solar cells with Mg-doped SnO_(2)deliver a champion PCE of 6.31%,22.8%higher than those without a buffer layer.Our work demonstrates that deliberate absorber growth as well as efficient hole blocking upon an appropriate buffer layer is viable in obtaining solution-processed Sb_(2)S_(3)solar cells with high performance.

关 键 词：MORPHOLOGY Sb_(2)S_(3)solar cells Mg-doped tin oxide Orientation 

分 类 号：TM914.4[电气工程—电力电子与电力传动] TB34[一般工业技术—材料科学与工程]