氮掺杂改性四方钨青铜结构铌酸盐及光电催化性能  

Nitrogen Doped Tetragonal Tungsten Bronze Structure Niobate for Photoelectrocatalysis Performance

作　　者：黄天皓 HUANG Tian-hao(School of Materials and Chemistry,University of Shanghai for Science and Technology,Shanghai 200093,China)

机构地区：[1]上海理工大学材料与化学学院,上海200093

出　　处：《广州化学》2022年第2期58-64,共7页Guangzhou Chemistry

摘　　要：通过熔盐法制备合成四方钨青铜结构材料Sr_(2)KNb_(5)O_(15)(SKNO),并运用热氨解法对材料进行N掺杂改性,探究了掺杂温度对光电催化性能的影响。采用X-射线衍射仪(XRD)、透射电子显微镜(TEM)、稳态荧光光谱仪(PL)等对N掺杂前后的SKNO样品进行了表征。试验结果表明,掺杂温度在400℃下即可成功实现N元素的掺杂,同时N元素的引入成功降低了材料的禁带宽度,使材料的光吸收范围拓宽至可见光区域。一个标准太阳光下,400℃进行N掺杂的样品相对未掺杂的样品,光电催化性能提高约6倍。Tetragonal tungsten-bronze structure material Sr_(2)KNb_(5)O_(15)(SKNO)was synthesized by molten salt method and N-doped modified by thermal ammoniation method.The effect of doping temperature on photocatalytic performance was investigated.The SKNO samples before and after N doping were characterized by X-ray diffraction(XRD),transmission electron microscopy(TEM)and steady state fluorescence spectrometer(PL).The experimental results show that the doping temperature of N element can be successfully realized at400℃,and the introduction of N element successfully reduces the band gap width of the material and broadens the light absorption range of the material to the visible light region.When tested under a standard sunlight,the photocatalytic performance of N-doped samples at 400℃is about 6 times higher than that of undoped samples.

关 键 词：四方钨青铜结构 光电催化 氮掺杂 带隙工程 水分解 

分 类 号：TB321[一般工业技术—材料科学与工程]