光掩膜版衍射条纹不良研究及改善分析  

Research and Improvement Analysis on the Defects of Photomask Diffraction Mura

作　　者：李文 徐兵 熊启龙 徐智俊 LI Wen;XU Bing;XIONG Qilong;XU Zhijun(Hefei Qingyi Photomask Ltd.,Hefei 238000,CHN;Shenzhen Qingyi Photomask Ltd.,Shenzhen Guangdong 518053,CHN)

机构地区：[1]合肥清溢光电有限公司,合肥238000 [2]深圳清溢光电股份有限公司,广东深圳518053

出　　处：《光电子技术》2022年第1期22-27,共6页Optoelectronic Technology

摘　　要：基于衍射条纹的产生机理,从图形设计和腔室环境方面提出改善措施,设置不同的重叠区与图形重叠占比、不同的重叠区位置类型以及不同腔室温度和相对湿度波动,观察版材的衍射条纹变化。试验表明,随着重叠区与图形重叠比例的增加,其衍射条纹不良的严重程度逐渐增加;与混合重叠区位置类型相比,采用单一重叠区位置类型在衍射条纹上表现更佳;腔室温度波动超过0.01℃、相对湿度波动超过32%时,聚焦气流波动超标,衍射条纹不良明显变严重。通过管控图形设计和光刻温湿度,在一定程度上可以降低衍射条纹的发生,对于其他条纹不良的改善也有一定的借鉴意义。Lithography process is the most important part of mask manufacturing processes. Diffraction mura,as a common defect in lithography process,seriously affects the quality of customer products. Based on the generation mechanism of diffraction mura,the improvement measures are put forward from the aspects of graphic design and chamber environment. Different overlap ratio of overlap and graphics,different overlap position types,chamber temperature and relative humidity fluctuations are set to observe the variation of diffraction mura. The results show that the severity of diffraction nura increases with the increase of overlap ratio;Compared with mixed overlap position type,Single overlap position type performs better on diffraction mura;When the chamber temperature fluctuates more than 0.01 ℃ and the relative humidity fluctuates more than 32%,the fluctuation of focused air flow exceeds the standard,and the diffraction mura becomes more serious. By controlling the temperature and humidity of graphic design and lithography,the occurrence of diffraction mura can be reduced to a certain extent,which can also be used for reference for the improvement of other stripes.

关 键 词：光掩膜版 衍射条纹 不良重叠区 位置类型 温湿度 

分 类 号：TN209[电子电信—物理电子学]