CCD亚微伏电荷转换因子结构的设计与验证  

Design and Experiment on Low Level Charge to Voltage Factor Structure of CCD

作　　者：王小东[1] 汪朝敏[1] 李佳[1] 涂戈 李金[1] WANG Xiaodong;WANG Chaomin;LI Jia;TU Ge;LI Jin(Chongqing Optoelectronics Research Institute,Chongqing 400060,CHN)

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《光电子技术》2022年第1期28-31,共4页Optoelectronic Technology

摘　　要：设计了大尺寸输出节点和大尺寸放大器栅电容的CCD特殊输出结构,使输出节点总电容约为4.5×10;F,对设计结构进行了工艺试验。对输出节点电容进行参数校准、结构优化、流片试验、测试验证。试验结果表明,优化设计后的CCD电压转换因子精确地达到了0.352μV/e^(-),满足了航天系统紫外线阵CCD满阱容量需达到1.0×10;e;/pixel量级,饱和输出幅度在3.5~4 V范围,CCD的电压转换因子在0.35μV/e;亚微伏水平(比传统CCD低1~2个数量级)的特殊输出结构要求。Larger size output node and bigger gate capacitor of amplifier were designed to ensure the total capacitor reach the level of 4.5×10;F and the experiment process of new design configuration was carried out.It was verified that after optimization of the design,the Charge to Voltage Factor of the ultraviolet linear CCD could accurately achieve 0.352μV/e;based on the development of parameter calibration,structure optimization,process testing,parameter examination and certifying.The results could finally meet the special needs of the space flight system on the basis of the improved CCD’s performance parameters,such as high level full-well capacity up to 1.0×10;e;/pixel,3.5~4 V output voltage and 0.35μV/e;low level Charge to Voltage Factor with one or two order of magnitude smaller than traditional CCD.

关 键 词：电荷耦合器件 电荷转换因子 输出节点电容 亚微伏结构 

分 类 号：TN386.5[电子电信—物理电子学]