A位Ce掺杂对CaBi_(4)Ti_(4)O_(15)铋层状高温压电陶瓷电性能的影响研究  

Effect of A-site Ce Doping on Electrical Properties of CaBi_(4)Ti_(4)O_(15) Bismuth Layered High-curie-temperature Piezoelectric Ceramics

作　　者：伍子成 沈宗洋 宋福生 骆雯琴 王竹梅 李月明 WU Zicheng;SHEN Zongyang;SONG Fusheng;LUO Wenqin;WANG Zhumei;LI Yueming(China National Light Industry Key Laboratory of Functional Ceramic Materials,Energy Storage and Conversion Ceramic Materials Engineering Laboratory of Jiangxi Province,School of Material Science and Engineering,Jingdezhen Ceramic University,Jingdezhen 333403,Jiangxi,China)

机构地区：[1]景德镇陶瓷大学材料科学与工程学院,中国轻工业功能陶瓷材料重点实验室,江西省能量存储与转换陶瓷材料工程实验室,江西景德镇333403

出　　处：《陶瓷学报》2022年第2期296-301,共6页Journal of Ceramics

基　　金：国家自然科学基金(61671224)。

摘　　要：采用固相反应法制备了Ce_(x)Ca_(1−x)Bi_(4)Ti_(4)O_(15)(CCBT,x=0,0.02,0.04,0.06,0.08,0.10)铋层状高温压电陶瓷,研究了A位Ce掺杂对陶瓷晶体结构、微观结构、介电、压电性能的影响规律。结果表明:所有样品的主晶相均具有m=4的铋层状结构,当x≥0.08时,出现Bi_(2)Ti_(2)O_(7)焦绿石杂相。当Ce掺杂量x=0.06时,样品具有最高的压电常数(d_(33)=17 pC·N^(−1)),是纯CBT陶瓷(d_(33)=8 pC·N^(−1))的两倍以上。同时,该陶瓷还具有居里温度高(T_(c)=773℃)、室温下介电损耗低(tanδ=0.7%)、电阻率高(ρ=6.4×10^(7)Ω·cm@500℃)的特点,且在550℃退火后,其d_(33)仍保持14.2 pC·N^(−1),超过室温值的80%,是制作高温压电传感器的理想陶瓷材料。Ce_(x)Ca_(1−x)Bi_(4)Ti_(4)O_(15)(CCBT,x=0,0.02,0.04,0.06,0.08,0.10)bismuth layered structured piezoelectric ceramics were prepared by using the conventional solid-state reaction method.The effect of A-site Ce doping on crystal structure,microstructure,dielectric and piezoelectric properties of the ceramics was investigated.All samples had bismuth layered structure with m=4 and Bi_(2)Ti_(2)O_(7) pyrochlore was present as the second phase when x≥0.08.Significantly enhanced piezoelectric coefficient(d_(33)=17 pC·N^(−1))was achieved for the ceramic sample with x=0.06,over two times than that of CBT(d_(33)=8 pC·N^(−1)).Meanwhile,this ceramic also had high Curie temperature(T_(c)=773℃),low dielectric loss at room temperature(tanδ=0.7%)and high resistivity(ρ=6.4×10^(7)Ω·cm@500℃).Furthermore,after annealing at 550℃,d_(33) still retained to be 14.2 pC·N^(−1),more than 80%of the room temperature value,indicating that it is ideal ceramic material for high temperature piezoelectric sensor applications.

关 键 词：无铅压电陶瓷 铋层状结构 CaBi_(4)Ti_(4)O_(15) 高温传感器 

分 类 号：TQ174.75[化学工程—陶瓷工业]