Controllable resistive switching of STO:Ag/SiO2-based memristor synapse for neuromorphic computing  

作　　者：Nasir Ilyas Jingyong Wang Chunmei Li Hao Fu Dongyang Li Xiangdong Jiang Deen Gu Yadong Jiang Wei Li 

机构地区：[1]School of Optoelectronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 610054,China [2]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China [3]School of Physics,University of Electronic Science and Technology of China,Chengdu 610054,China

出　　处：《Journal of Materials Science & Technology》2022年第2期254-263,共10页材料科学技术（英文版）

基　　金：financially supported by the National Science Funds for Excellent Young Scholars of China(no.61822106);the Natural Science Foundation of China(no.U19A2070)。

摘　　要：Resistive random-access memory(RRAM)is a promising technology to develop nonvolatile memory and artificial synaptic devices for brain-inspired neuromorphic computing.Here,we have developed a STO:Ag/SiO_(2) bilayer based memristor that has exhibited a filamentary resistive switching with stable endurance and long-term data retention ability.The memristor also exhibits a tunable resistance modulation under positive and negative pulse trains,which could fully mimic the potentiation and depression behavior like a bio-synapse.Several synaptic plasticity functions,including long-term potentiation(LTP)and long-term depression(LTD),paired-pulsed facilitation(PPF),spike-rate-dependent-plasticity(SRDP),and post-tetanic potentiation(PTP),are faithfully implemented with the fabricated memristor.Moreover,to demonstrate the feasibility of our memristor synapse for neuromorphic applications,spike-timedependent plasticity(STDP)is also investigated.Based on conductive atomic force microscopy observations and electrical transport model analyses,it can be concluded that it is the controlled formation and rupture of Ag filaments that are responsible for the resistive switching while exhibiting a switching ratio of~10;along with a good endurance and stability suitable for nonvolatile memory applications.Before fully electroforming,the gradual conductance modulation of Ag/STO:Ag/SiO_(2)/p^(++)-Si memristor can be realized,and the working mechanism could be explained by the succeeding growth and contraction of Ag filaments promoted by a redox reaction.This newly fabricated memristor may enable the development of nonvolatile memory and realize controllable resistance/weight modulation when applied as an artificial synapse for neuromorphic computing.

关 键 词：Ag/STO:Ag/SiO2/p++-Si memristor Filamentary resistive switching Resistance/weight modulation Synaptic plasticity Normomorphic computing 

分 类 号：TN60[电子电信—电路与系统] TP333[自动化与计算机技术—计算机系统结构]