40nm NMOS器件沟道热载流子效应和电离总剂量效应关联分析  

Correlation Analysis of Total Ionizing Dose Effect and Channel HotCarrier Effect on 40nm NMOS Devices

作　　者：何宝平[1] 马武英[1] 王祖军[1] 姚志斌[1] 缑石龙 HE Baoping;MA Wuying;WANG Zujun;YAO Zhibin;GOU Shilong(State Key Laboratory of Intense Pulsed Radiation Simulation and Effect,Northwest Institute of Nuclear Technology,Xi’an 710024,China)

机构地区：[1]强脉冲辐射环境模拟与效应国家重点实验室,西北核技术研究所,西安710024

出　　处：《现代应用物理》2022年第1期180-185,共6页Modern Applied Physics

基　　金：国家自然科学基金资助项目(11690043,11690040)。

摘　　要：通过理论模拟和辐照试验,对40 nm NMOS器件在电离总剂量(total ionization dose,TID)效应和沟道热载流子(channel hot carrier,CHC)效应综合作用下二者的相关性进行了研究。研究结果表明,CHC效应和TID效应单独作用都会对纳米NMOS器件产生影响,而在综合作用下是否相关依赖于二者的先后试验顺序。器件在先TID效应后CHC效应的综合作用下,损伤程度要大于CHC效应单独作用的结果,2种效应具有相关性;器件在先CHC效应后TID效应的综合作用下,损伤程度小于TID效应和CHC效应单独作用的结果,2种效应没有相关性。The correlation between total ionization dose(TID)effect and channel hot carrier(CHC)effect on 40 nm NMOS devices is studied by theoretical simulation and radiation experiment,and the relationship between the TID effect and CHC effect is analyzed.The results show that both CHC effect and TID effect can affect nano NMOS devices,and whether they are related under the combined action of the two effects depends on their test sequence.Under the combined action of the CHC effect after the TID effect,the damage of the device is greater than that of the CHC effect alone.The correlation between the two effects lies in the electrons in the intrinsic channel,and the two effects are correlated.Under the combined effect of TID effect after CHC effect,the damage of the device is less than that of TID effect alone and CHC effect alone.The co-action of the two effects is only a cancellation process,and the synthesis effect is only the superposition result of the two effects,so there is no correlation between the two effects.

关 键 词：电离总剂量效应 沟道热载流子效应 浅槽隔离 超薄栅氧化层 

分 类 号：TN386[电子电信—物理电子学] TL99[核科学技术—核技术及应用]