ZnO纳米棒阵列的光敏忆阻开关特性  

Photoresistive switching characteristics of ZnO nanorods array

作　　者：陈建彪 高丽烨 徐讲文 杨春艳 郭童童 CHEN Jian-biao;GAO Li-ye;XU Jiang-wen;YANG Chun-yan;GUO Tong-tong(Key Laboratory of Atomic and Molecular Physics & Functional Materials,College of Physics andElectronic Engineering,Northwest Normal University,Lanzhou 730070,Gansu,China)

机构地区：[1]西北师范大学物理与电子工程学院,甘肃省原子分子物理与功能材料重点实验室,甘肃兰州730070

出　　处：《西北师范大学学报（自然科学版）》2022年第2期34-39,共6页Journal of Northwest Normal University(Natural Science)

基　　金：国家自然科学基金资助项目(12064039)。

摘　　要：通过水热法成功合成取向生长的氧化锌纳米棒阵列,并制备了Cu/ZnO NRs/Zn结构的忆阻器件.研究结果表明,基于氧化锌纳米棒阵列的忆阻器表现出良好的双极阻变行为,并在光辐照下,有响应电流增大的光电协同刺激响应性,阻变机制为由空间电荷限制电流(SCLC)主导的电子型阻变机制.该工作为开发具有光电操作的人工神经突触器件和神经网络计算提供了一种经济有效的方法.A Cu/ZnO NRs/Zn memristor device was prepared by hydrothermal method with ZnO nanorods.The results show that the memristor based on ZnO nanorods array has a good bipolar resistance behavior,and has the cooperative response of photoelectric stimulus to increase the current under light irradiation.The resistance mechanism is dominated by space charge limited current(SCLC)and electronic resistance.This work provides a cost-effective method for the development of artificial synaptic devices,neural networks and computers with photoelectric manipulation.

关 键 词：忆阻器 氧化锌纳米棒 双极阻变特性 水热法 

分 类 号：O484[理学—固体物理] O475[理学—物理]