掺锗提高VO_(2)薄膜的相变温度机理研究  

Mechanism of Phase Change Temperature of VO_(2) Thin Films by Doping Germanium

作　　者：崔景贺 蒋权伟 高忙忙[1] 梁森[1] CUI Jinghe;JIANG Quanwei;GAO Mangmang;LIANG Sen(Key Laboratory of Ningxia for photovoltaic Materials, School of Materials and New Energy, Ningxia University, Yinchuan 750021, China)

机构地区：[1]宁夏大学材料与新能源学院,宁夏光伏材料重点实验室,银川750021

出　　处：《人工晶体学报》2022年第4期666-672,共7页Journal of Synthetic Crystals

基　　金：宁夏自然科学基金(2020AAC03005)。

摘　　要：二氧化钒(VO_(2))作为一种长久以来备受关注的新型可逆相变材料,发展潜力巨大,其相变温度(T_(MIT))的调控一直是研究热点。本文主要利用锗离子作为掺杂离子探索其对VO_(2)薄膜T_(MIT)的影响,并尝试解释其内部作用机理。在约1 cm2大小抛光的氧化铝薄片上沉积了一系列含不同比例锗离子VO_(2)薄膜。研究发现锗离子作为掺杂离子确实有利于T_(MIT)的提高(本课题T_(MIT)最大可达84.7℃)。T_(MIT)提高的主要原因是锗离子的引入能够强化单斜态V-V二聚体的稳定性,进而增强单斜态的稳定性,使得低温单斜态向四方金红石态转变更加困难。As a new type of reversible phase change material,vanadium dioxide(VO_(2))has shown great potential in development with the regulation of its phase change temperature(T_(MIT))and were extensively studied.The experiment in this study focuses on exploring the effect of germanium ions on T_(MIT) of VO_(2)thin films and trying to explain the internal mechanism.A series of VO_(2)films containing different ratios of germanium ions were deposited on polished alumina sheets.The characterization results show that germanium ions contribute to increasing T_(MIT)(maximum T_(MIT) is 84.7℃).The main reason for this increase is that germanium ion enhances the stability of monoclinic V-V dimer by increasing the stability of monoclinic V-V dimer,which makes the transition from low-temperature monoclinic state to tetragonal rutile state more difficult.

关 键 词：二氧化钒 薄膜 相变温度 二氧化锗 晶格畸变 电学性能 V-V二聚体 

分 类 号：O484[理学—固体物理] TB383.2[理学—物理]