Mechanical memory operations in piezotransistive GaN microcantilevers using Au nanoparticleenhanced photoacoustic excitation  

作　　者：Ferhat Bayram Durga Gajula Digangana Khan Goutam Koley 

机构地区：[1]Holcombe Department of Electrical and Computer Engineering,Clemson University,Clemson,SC 29634,USA [2]School of Electrical and Computer Engineering,Georgia Institute of Technology,Atlanta,GA 30332,USA

出　　处：《Microsystems & Nanoengineering》2022年第1期161-174,共14页微系统与纳米工程（英文）

基　　金：This research was financially supported by the National Science Foundation,grant numbers ECCS-1809891 and IIP-1602006.

摘　　要：Nonlinear oscillations in micro-and nanoelectromechanical systems have emerged as an exciting research area in recent years due to their promise in realizing low-power,scalable,and reconfigurable mechanical memory and logic devices.Here,we report ultralow-power mechanical memory operations utilizing the nonlinear oscillation regime of GaN microcantilevers with embedded piezotransistive AlGaN/GaN heterostructure field effect transistors as highly sensitive deflection transducers.Switching between the high and low oscillatory states of the nonlinear oscillation regime was demonstrated using a novel phase-controlled opto-mechanical excitation setup,utilizing a piezo actuator and a pulsed laser as the primary and secondary excitation sources,respectively.Laser-based photoacoustic excitation was amplified through plasmonic absorption in Au nanoparticles deposited on a transistor.Thus,the minimum switching energy required for reliable memory operations was reduced to less than a picojoule(pJ),which translates to one of the lowest ever reported,when normalized for mass.

关 键 词：EXCITATION operations CANTILEVER 

分 类 号：TN75[电子电信—电路与系统]