SiC MOSFET短路保护技术综述  

Review on Short-Circuit Protection Technology of SiC MOSFET

作　　者：文阳[1] 杨媛[1] 宁红英[1] 张瑜 高勇[1] Wen Yang;Yang Yuan;Ning Hongying;Zhang Yu;Gao Yong(College of Automation and Information Engineering Xi’an University of Technology,Xi’an 710048,China;College of Technology Xi’an Siyuan University,Xi’an 710038,China)

机构地区：[1]西安理工大学自动化与信息工程学院,西安710048 [2]西安思源学院工学院,西安710038

出　　处：《电工技术学报》2022年第10期2538-2548,共11页Transactions of China Electrotechnical Society

基　　金：国家自然基金项目(62174134);陕西省教育厅专项科学研究计划项目(21JK0791);陕西省创新能力支撑计划项目(2021TD-25)资助。

摘　　要：随着电力电子技术的飞速发展,SiC MOSFET以优异的材料特性在高频、高压、高温电力电子应用中展现了显著的优势。然而,SiC MOSFET较高的开关速度与较弱的短路承受能力对短路保护技术带来了新的挑战。该文首先介绍SiC MOSFET不同短路类型以及短路测试方法;其次对SiC MOSFET短路失效模式及失效机理进行分析;然后详细梳理现有SiC MOSFET短路检测与短路关断技术的原理与优缺点,讨论现有SiC MOSFET短路保护技术在应用中存在的问题与挑战;最后对SiC MOSFET短路保护技术的发展趋势进行展望。With the development of power electronics technology,SiC MOSFETs show significant advantages in power electronics applications of high frequency,high voltage and high temperature due to its excellent material properties.However,the high switching speed and poor short-circuit withstand capability of SiC MOSFETs bring new challenges to short-circuit protection technology.In this paper,different short-circuit fault types and testing methods of SiC MOSFETs are introduced firstly.Secondly,the short-circuit failure mode and mechanism of SiC MOSFET are analyzed.On this basis,the principle,advantages and disadvantages of the existing short-circuit detection and turn-off technology of SiC MOSFETs are summarized in detail,and the problems and challenges in the application of the current short-circuit protection technology of SiC MOSFETs are discussed.Finally,the development trend of SiC MOSFET short-circuit protection technology is prospected.

关 键 词：SiC MOSFET 短路测试 短路失效 短路保护 

分 类 号：TM46[电气工程—电器]