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作 者:孟维东 汤伟 魏俊梅 MENG Weidong;TANG Wei;WEI Junmei(TBEA Zongfa Shanghai High Voltage Switchgear Co.,Ltd.,Shanghai 201499,China)
机构地区:[1]特变电工中发上海高压开关有限公司,上海201499
出 处:《高压电器》2022年第5期80-86,共7页High Voltage Apparatus
摘 要:HVDC输电技术的快速发展对HVDC GIS研发提出了迫切需求。HVDC GIS母线的绝缘性能是其重要性能。文中对HVDC GIS母线结构及耐受的电压种类进行了介绍。对静电场仿真和恒定电场仿真数学模型进行了对比。介绍了影响HVDC GIS母线绝缘性能的因素。对320 kV HVDC母线工况1、工况2、工况3三种工况及盆式绝缘子带和不带地电位屏蔽环两种结构的电场分布进行了仿真分析,计算结果表明:在320 kV电压作用下,当盆式绝缘子不带地电位屏蔽环时,工况2盆式绝缘子沿面电场强度Eabs较工况1大142.7%;工况3较工况2大3.92%。原因在于环氧树脂电导率是SF6的106倍,而环氧树脂相对介电常数仅是SF6的6倍;且环氧树脂的电导率随着温度降低而减小。当盆式绝缘子带地电位屏蔽环时,3种工况下盆式绝缘子沿面电场分布接近,体现了地电位屏蔽环可以有效改善HVDC母线盆式绝缘子尾部电场,克服母线温度分布不均带来的不良影响。The rapid development of HVDC technology has put forward an urgent demand for the development of HVDC GIS.The insulation performance of HVDC GIS busbar is its important performance. In the paper,the structure and types of voltage to be withstood by the HVDC busbar are introduced. The mathematical models of electrostatic field and stationary conductive field are compared. The factors that influence HVDC busbar insulation performance are discussed. Such three cases as case1,case 2 and case 3 of 320 kV HVDC busbar and the electric field distribution of such two structures of insulating spacers as with and without grounding potential shields are simulated and analyzed. The calculation result shows that under the action of 320 kV and in case of the insulating spacer without ground potential shield,the surface electric field intensity Eabs of insulating spacer of case 2 is 142.7% higher than that of case1,and 3.92% lower than that of case 3. The reason is that the conductivity of epoxy resin is 106times that of SF6,but the relative permittivity of epoxy resin is only 6 times that of SF6. Also,the conductivity of the epoxy resin is reduced with the decrease of temperature. In case of insulating spacer with ground potential shield,the surface electric field distribution of the insulating spacers under the three cases is pretty close,showing that the ground potential shield can effectively improve the electric field at the tail of the insulating spacers of HVDC busbar and overcome the adverse effect due to uneven temperature distribution of busbar.
关 键 词:HVDC GIS母线 静电场 恒定电场 盆式绝缘子 地电位屏蔽环 电场强度
分 类 号:TM721.1[电气工程—电力系统及自动化] TM645.11
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