Surface defect ordered Cu_(2)ZnSn(S,Se)_(4) solar cells with efficiency over 12% via manipulating local substitution  

作　　者：Changcheng Cui Dongxing Kou Wenhui Zhou Zhengji Zhou Shengjie Yuan Yafang Qi Zhi Zheng Sixin Wu 

机构地区：[1]Key lab for Special Functional Materials,Ministry of Education,National&Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology,School of Materials Science and Engineering,Collaborative Innovation Center of Nano Functional Materials and Applications,Henan University,Kaifeng 475004,Henan,China [2]Inst Surface Micro&Nano Mat,Coll Adv Mat&Energy,Key Lab Micronano Energy Storage&Convers Mat He,Xuchang University,Xuchang 461000,Henan,China

出　　处：《Journal of Energy Chemistry》2022年第4期555-562,共8页能源化学（英文版）

基　　金：supported by the National Natural Science Foundation of China(61874159,62074052,61974173,52072327,51702085 and 51802081);the Joint Talent Cultivation Funds of NSFC-HN(U1704151 and U1904192);the Zhongyuan Thousand Talents(Zhongyuan Scholars)Program of Henan Province(202101510004);the Science and Technology Innovation Talents in Universities of Henan Province(21HASTIT023)。

摘　　要：The environmentally friendly Cu_(2)ZnSn(S,Se)_(4)(CZTSSe) compounds are promising direct bandgap materials for application in thin film solar cells, but the spontaneous surface defects disordering would lead to large open-circuit voltage deficit(V_(oc,deficit)) and significantly limit kesterite photovoltaics performance,primarily arising from the generated more recombination centers and insufficient p to n conversion at p-n junction. Herein, we establish a surface defects ordering structure in CZTSSe system via local substitution of Cu by Ag to suppress disordered Cu_(Zn) defects and generate benign n-type Zn_(Ag) donors. Taking advantage of the decreased annealing temperature of Ag F post deposition treatment(PDT), the high concentration of Ag incorporated into surface absorber facilitates the formation of surface ordered defect environment similar to that of efficient CIGS PV. The manipulation of highly doped surface structure could effectively reduce recombination centers, increase depletion region width and enlarge the band bending near p-n junction. As a result, the Ag F-PDT device finally achieves maximum efficiency of 12.34% with enhanced V_(oc) of 0.496 V. These results offer a new solution route in surface defects and energy-level engineering, and open the way to build up high quality p-n junction for future development of kesterite technology.

关 键 词：KESTERITE Cu_(2)ZnSn(S Se)_(4)thin film solar cells Interface recombination Defect passivation Ag substitution 

分 类 号：TM914.4[电气工程—电力电子与电力传动] TQ131.21[化学工程—无机化工]