Preparation and characterization of Mg-doped CaCu_(3)Ti_(4)O_(12) thin films  

Mg掺杂CaCu_(3)Ti_(4)O_(12)薄膜的制备与表征

作　　者：Ming JIANG Zhan CHENG Dan ZHAO Lei ZHANG Dong XU 姜明;程战;赵丹;张雷;徐东(安徽工业大学冶金减排与资源循环教育部重点实验室,马鞍山243002;安徽工程大学材料科学与工程学院,芜湖241000;中机智能装备创新研究院(宁波)有限公司,宁波315700)

机构地区：[1]Key Laboratory of Metallurgical Emission Reduction&Resources Recycling,Ministry of Education,Anhui University of Technology,Ma’anshan 243002,China [2]School of Materials Science and Engineering,Anhui Polytechnic University,Wuhu 241000,China [3]China Innovation Academy of Intelligent Equipment(Ningbo)Co.,Ltd.,Ningbo 315700,China

出　　处：《Transactions of Nonferrous Metals Society of China》2022年第5期1589-1597,共9页中国有色金属学报（英文版）

基　　金：the financial supports from the National Natural Science Foundation of China(Nos.52072004,51802003,51572113)。

摘　　要：Mg-doped CaCu_(3-x)Mg_(x)Ti_(4)O_(12)(x=0,0.05,0.1,0.15,0.2,at.%)thin films were prepared by a modified sol−gel method.A comparative study on the microstructure and electrical properties of Mg-doped CaCu_(3)Ti_(4)O_(12)(CCTO)thin films was carried out.The grain sizes of the Mg-doped CCTO thin films were smaller in comparison to the undoped CCTO films.Furthermore,compared to undoped CCTO films,Mg-doped CCTO thin films obtained higher dielectric constant as well as excellent frequency stability.Meanwhile,Mg doping could reduce the dielectric loss of CCTO thin films in the frequency range of 104−106 Hz.The results showed that the Mg-doped CCTO thin films had the better electrical characteristics compared with the undoped CCTO films.The nonlinear coefficient of Mg-doped CCTO thin films at x=0.15 and x=0.1 was improved to 7.4 and 6.0,respectively.采用改进的溶胶凝胶法制备Mg掺杂的CaCu_(3-x)Mg_(x)Ti_(4)O_(12)(x=0、0.05、0.1、0.15和0.2,摩尔分数,%)薄膜。对掺Mg的CaCu_(3)Ti_(4)O_(12)(CCTO)薄膜的微观结构和电性能进行研究。与未掺杂的CCTO薄膜相比,掺Mg的CCTO薄膜的晶粒尺寸较小。此外,与未掺杂的CCTO薄膜相比,掺Mg的CCTO薄膜具有高介电常数和出色的频率稳定性。同时,Mg掺杂可以减少CCTO薄膜在10^(4)~10^(6) Hz频率范围内的介电损耗。结果表明,与未掺杂的CCTO薄膜相比,掺Mg的CCTO薄膜具有良好的电学特性,x=0.15和x=0.1的Mg掺杂CCTO薄膜的非线性系数分别提高到7.4和6.0。

关 键 词：dielectric material CaCu_(3)Ti_(4)O_(12) Mg doping dielectric constant dielectric loss varistor properties 

分 类 号：TB383.2[一般工业技术—材料科学与工程]