Additive and interfacial control for efficient perovskite light-emitting diodes with reduced trap densities  

作　　者：Shun Tian Chen Zou Runchen Lai Chungen Hsu Xuhui Cao Shiyu Xing Baodan Zhao Dawei Di 

机构地区：[1]State Key Laboratory of Modern Optical Instrumentation,College of Optical Science and Engineering,International Research Center for Advanced Photonics,Zhejiang University,Hangzhou 310027,China

出　　处：《Journal of Semiconductors》2022年第5期32-44,共13页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(NSFC)(61975180,62005243);KunPeng Programme of Zhejiang Province(D.D.);Zhejiang University Education Foundation Global Partnership Fund;the Natural Science Foundation of Zhejiang Province(LR21F050003);Fundamental Research Funds for the Central Universities(2020QNA5002)。

摘　　要：Metal halide perovskite semiconductors show excellent optoelectronic properties including tunable bandgaps[1,2],narrow emission bandwidths[3]and high luminescence quantum efficiencies[4],making them an ideal candidate for light-emitting diode(LED)applications.Perovskite LEDs(PeLEDs)have attracted considerable attention since the initial report of room-temperature electroluminescence(EL)from halide perovskites in 2014[5].

关 键 词：DIODES OPTOELECTRONIC light 

分 类 号：TN312.8[电子电信—物理电子学] TB34[一般工业技术—材料科学与工程]