Double-balanced mixer based on monolayer graphene fieldeffect transistors  

作　　者：Min Wu Weida Hong Guanyu Liu Jiejun Zhang Ziao Tian Miao Zhang 

机构地区：[1]School of Microelectronics,University of Science and Technology of China,Hefei 230022,China [2]Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

出　　处：《Journal of Semiconductors》2022年第5期79-83,共5页半导体学报（英文版）

基　　金：National Natural Science Foundation of China(Grant Nos.51925208,61974157,61851401,62122082);Key Research Project of Frontier Science,Chinese Academy of Sciences(QYZDB-SSW-JSC021);Strategic Priority Research Program(B)of the Chinese Academy of Sciences(XDB30030000);National Science and Technology Major Project(2016ZX02301003);Science and Technology Innovation Action Plan of Shanghai Science and Technology Committee(20501130700);Science and Technology Commission of Shanghai Municipality(19JC1415500)。

摘　　要：Graphene field-effect transistors(GFET) have attracted much attention in the radio frequency(RF) and microwave fields because of its extremely high carrier mobility. In this paper, a GFET with a gate length of 5 μm is fabricated through the van der Walls(vdW) transfer process, and then the existing large-signal GFET model is described, and the model is implemented in Verilog-A for analysis in RF and microwave circuits. Next a double-balanced mixer based on four GFETs is designed and analyzed in advanced design system(ADS) tools. Finally, the simulation results show that with the input of 300 and 280 MHz,the IIP3 of the mixed signal is 24.5 dBm.

关 键 词：GFET MIXER RF SIMULATION IIP3 

分 类 号：TN386[电子电信—物理电子学]