Tin dioxide buffer layer-assisted efficiency and stability of wide-bandgap inverted perovskite solar cells  

作　　者：Bingbing Chen Pengyang Wang Ningyu Ren Renjie Li Ying Zhao Xiaodan Zhang 

机构地区：[1]Institute of Photoelectronic Thin Film Devices and Technology,Renewable Energy Conversion and Storage Center,Solar Energy Conversion Center,Nankai University,Tianjin 300350,China [2]Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin,Tianjin 300350,China [3]Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education,Tianjin 300350,China [4]Collaborative Innovation Center of Chemical Science and Engineering(Tianjin),Tianjin 300072,China [5]School of Physical Science and Technology,Inner Mongolia University,Key Laboratory of Semiconductor,Hohhot 010021,China

出　　处：《Journal of Semiconductors》2022年第5期89-103,共15页半导体学报（英文版）

基　　金：the supports from National Key Research and Development Program of China(Grant No.2018YFB1500103);the Overseas Expertise Introduction Project for Discipline Innovation of Higher Education of China(Grant No.B16027);Tianjin Science and Technology Project(Grant No.18ZXJMTG00220);the Fundamental Research Funds for the Central Universities,Nankai University(Grant Nos.63191736,ZB19500204);Natural Science Foundation of Tianjin(No.20JCQNJC02070);China Postdoctoral Scie nce Foundation(No.2020T130317)。

摘　　要：Inverted perovskite solar cells(IPSCs) have attracted tremendous research interest in recent years due to their applications in perovskite/silicon tandem solar cells. However, further performance improvements and long-term stability issues are the main obstacles that deeply hinder the development of devices. Herein, we demonstrate a facile atomic layer deposition(ALD) processed tin dioxide(SnO2) as an additional buffer layer for efficient and stable wide-bandgap IPSCs. The additional buffer layer increases the shunt resistance and reduces the reverse current saturation density, resulting in the enhancement of efficiency from 19.23% to 21.13%. The target device with a bandgap of 1.63 eV obtains open-circuit voltage of 1.19 V, short circuit current density of 21.86 mA/cm^(2), and fill factor of 81.07%. More importantly, the compact and stable SnO_(2) film invests the IPSCs with superhydrophobicity, thus significantly enhancing the moisture resistance. Eventually, the target device can maintain 90% of its initial efficiency after 600 h storage in ambient conditions with relative humidity of 20%–40% without encapsulation. The ALD-processed SnO_(2) provides a promising way to boost the efficiency and stability of IPSCs, and a great potential for perovskite-based tandem solar cells in the near future.

关 键 词：atomic layer deposition tin dioxide additional buffer layer efficiency and stability inverted perovskite solar cells 

分 类 号：TM914.4[电气工程—电力电子与电力传动]