基于MOS管的忆阻器电路仿真器设计  

The design of memristor emulator based on MOS transistor

作　　者：卢振洲 肖恩浩 LU Zhenzhou;XIAO Enhao(School of Electronic Information,Hangzhou Dianzi University,Hangzhou Zhejiang 310018,China)

机构地区：[1]杭州电子科技大学电子信息学院,浙江杭州310018

出　　处：《杭州电子科技大学学报（自然科学版）》2022年第3期1-7,共7页Journal of Hangzhou Dianzi University：Natural Sciences

基　　金：浙江省自然科学基金资助项目(LY20F010008)。

摘　　要：运用互补金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)技术,设计了2款浮地型忆阻器电路仿真器,并研究电路仿真器在不同激励条件下的特性。理论推导表明,设计的电路仿真器的端口电压电流关系符合忆阻器与状态变量相关的欧姆定律方程。仿真结果表明,设计的忆阻器电路仿真器具有特有的捏滞回环特性,验证了其正确性和可行性。Based on CMOS,two types of floating memristor emulators are presented in this paper.The theoretical analysis and simulation of them are carried out respectively.Theoretical analysis shows that the port voltage-current relationship of emulators conforms with the Ohm's law which is related to the state variable of the memristor.Simulation results validate the unique pinch hysteretic loop characteristics of the memristor.Through the study of circuit characteristics under different excitation conditions,the frequency and amplitude operating ranges of emulators are obtained.Hence,it verifies the correctness and the feasibility of the proposed memristor emulators.

关 键 词：忆阻器 浮地型 电路仿真器 CMOS 

分 类 号：TN709[电子电信—电路与系统]