高工作温度碲镉汞红外探测器研究进展  

The theory and research advancement of HgCdTe detectors at high operating temperature

作　　者：宋淑芳[1] 黄来玉 田震[1] SONG Shu-fang;HUANG Lai-yu;TIAN Zhen(North China Research Institute of Electro-Optics,Beijing 100015;Military Region Data Information Room of Liaoning Province,Shenyang 110032,China)

机构地区：[1]华北光电技术研究所,北京100015 [2]辽宁省军区数据信息室,辽宁沈阳110032

出　　处：《激光与红外》2022年第5期636-640,共5页Laser & Infrared

摘　　要：高工作温度碲镉汞红外探测器作为最近来发展起来的新型探测器,在保证性能不变的基础上,实现了尺寸小、重量轻、功耗低等功能,成为军事侦察、无人机、无人平台的重要探测器件。本文阐述了高工作温度碲镉汞红外探测器的基本原理,重点介绍了碲镉汞P-on-N红外探测器的器件结构设计,并且对美国Raytheon、法国Sofradir、德国AIM、美国Teledyne、美国DRS等公司的研究进展进行了综述性介绍。HgCdTe detectors at high operating temperature realizing the functions of small size,light weight and low power consumption on the basis of ensuring the constant performance,has become an important detector for military reconnaissance,UAV and unmanned platform.In this paper,the theory and the research on HgCdTe detectors at higher operating temperature(HOT)are described,the device structure of P-on-N HgCdTe detector is mainly introduced.In addition,the research progress and applications of HgCdTe detectors at high operating temperature of Raytheon in America,Sofradir in France,AIM in German,Teledyne in America and DRS in America are reviewed.

关 键 词：HGCDTE 高工作温度 中波 长波 

分 类 号：TN214[电子电信—物理电子学]