Vertical Schottky ultraviolet photodetector based on graphene and top–down fabricated GaN nanorod arrays  

作　　者：Xuemin Zhang Changling Yan Jinghang Yang Chao Pang Yunzhen Yue Chunhong Zeng Baoshun Zhang 

机构地区：[1]State Key Laboratory on High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,China [2]Nanofabrication Facility,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China

出　　处：《Journal of Semiconductors》2022年第6期59-65,共7页半导体学报（英文版）

基　　金：supported by the Science Foundation of Changchun University of Science and Technology under Grant No. 6141B010328

摘　　要：GaN has been widely used in the fabrication of ultraviolet photodetectors because of its outstanding properties.In this paper,we report a graphene–GaN nanorod heterostructure photodetector with fast photoresponse in the UV range.GaN nanorods were fabricated by a combination mode of dry etching and wet etching.Furthermore,a graphene–GaN nanorod heterostructure ultraviolet detector was fabricated and its photoelectric properties were measured.The device exhibits a fast photoresponse in the UV range.The rising time and falling time of the transient response were 13 and 8 ms,respectively.A high photovoltaic responsivity up to 13.9 A/W and external quantum efficiency up to 479%were realized at the UV range.The specific detectivity D*=1.44×10^(10) Jones was obtained at–1 V bias in ambient conditions.The spectral response was measured and the highest response was observed at the 360 nm band.

关 键 词：GRAPHENE GaN nanorods ultraviolet photodetector top–down fabrication 

分 类 号：TN23[电子电信—物理电子学] TQ133.51[化学工程—无机化工] TB383.1[一般工业技术—材料科学与工程]